Patents by Inventor Thomas Signamarcheix
Thomas Signamarcheix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11251321Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.Type: GrantFiled: January 27, 2017Date of Patent: February 15, 2022Assignees: Soitec, Commissariat A L'Energie Atomigue et aux Energies AlternativesInventors: Eric Guiot, Aurelie Tauzin, Thomas Signamarcheix, Emmanuelle Lagoutte
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Publication number: 20210193853Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.Type: ApplicationFiled: January 27, 2017Publication date: June 24, 2021Applicants: Soitec, Commissariat A L'Energie Atomique et aux Energies Alternatives, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Eric Guiot, Aurelie Tauzin, Thomas Signamarcheix, Emmanuelle Lagoutte
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Patent number: 9997394Abstract: A method of transferring a thin layer from a first substrate to a second substrate with different coefficients of thermal expansion, including: providing at least one intermediate layer which temperature is increased by induction when an electromagnetic field is applied to it, more than a temperature increase in the first and second substrates; making contact between the first substrate and the second substrate, with the at least one intermediate layer interposed between them; fracturing the first substrate at a weakened zone making use of supply of thermal energy at the weakened zone made by applying an electromagnetic field to a heterostructure formed by making contact between the first substrate and the second substrate, the application generating local induction heating in the intermediate layer that induces a temperature gradient with a local value at the weakened zone activating the fracture mechanism.Type: GrantFiled: June 27, 2014Date of Patent: June 12, 2018Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Thomas Signamarcheix, Emmanuel Augendre, Lamine Benaissa
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Publication number: 20160372362Abstract: A method of transferring a thin layer from a first substrate to a second substrate with different coefficients of thermal expansion, including: providing at least one intermediate layer which temperature is increased by induction when an electromagnetic field is applied to it, more than a temperature increase in the first and second substrates; making contact between the first substrate and the second substrate, with the at least one intermediate layer interposed between them; fracturing the first substrate at a weakened zone making use of supply of thermal energy at the weakened zone made by applying an electromagnetic field to a heterostructure formed by making contact between the first substrate and the second substrate, the application generating local induction heating in the intermediate layer that induces a temperature gradient with a local value at the weakened zone activating the fracture mechanism.Type: ApplicationFiled: June 27, 2014Publication date: December 22, 2016Applicant: Commissariat a l'energie atomique et aux energies alternativesInventors: Thomas SIGNAMARCHEIX, Emmanuel AUGENDRE, Lamine BENAISSA
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Publication number: 20160149068Abstract: A solar cell including: a stack of at least two sub-cells, a tunnel diode, including first and second superposed layers that are highly doped with opposite conductivity types, being interposed between two adjacent sub-cells; a first electrode and a second electrode respectively in contact with one and other of faces positioned at the ends of the stack; and, for at least one tunnel diode, a third electrode and a fourth electrode in electrical contact respectively with the first layer and the second layer of the tunnel diode.Type: ApplicationFiled: June 16, 2014Publication date: May 26, 2016Applicant: Commissariat a I'energie atomique et aux energies alternativesInventors: Mathieu BAUDRIT, Thomas SIGNAMARCHEIX
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Publication number: 20160043269Abstract: Process for manufacturing a multi-junction structure for a photovoltaic cell. The process includes steps in: a) providing a first donor substrate including a first carrier substrate and a first seed layer including a first material; b) providing a second donor substrate including a second carrier substrate and a second layer including a second material different from the first material; c) bringing the first seed layer and the second layer into contact so as to obtain a direct bond between the first seed layer and the second layer with a view to forming the bonding interface; d) removing the first carrier substrate so as to expose the first seed layer; and e) epitaxially growing at least one first junction on the first seed layer.Type: ApplicationFiled: March 24, 2014Publication date: February 11, 2016Inventors: Emmanuelle LAGOUTTE, Thomas SIGNAMARCHEIX
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Patent number: 9076713Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localized positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.Type: GrantFiled: January 23, 2013Date of Patent: July 7, 2015Assignees: Soitec, Commissariat à l'Énergie AtomiqueInventors: Thomas Signamarcheix, Frederic Allibert, Chrystel Deguet
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Patent number: 8871607Abstract: A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.Type: GrantFiled: June 6, 2008Date of Patent: October 28, 2014Assignees: S.O.I. TEC Silicon on Insulator Technologies, Commissariat a l'Energie AtomiqueInventors: Thomas Signamarcheix, Franck Fournel, Hubert Moriceau
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Patent number: 8841202Abstract: A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.Type: GrantFiled: February 12, 2010Date of Patent: September 23, 2014Assignee: Commissariat a l'Energie AtomiqueInventors: Franck Fournel, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Patent number: 8501589Abstract: A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.Type: GrantFiled: October 29, 2009Date of Patent: August 6, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Franck Fournel, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Patent number: 8372733Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.Type: GrantFiled: September 2, 2009Date of Patent: February 12, 2013Assignees: Soitec, Commissariat à l'Énergie AtomiqueInventors: Thomas Signamarcheix, Frederic Allibert, Chrystel Deguet
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Patent number: 8318555Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.Type: GrantFiled: October 29, 2009Date of Patent: November 27, 2012Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Thomas Signamarcheix, Franck Fournel, Laurent Clavelier, Chrystel Deguet
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Patent number: 8293620Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.Type: GrantFiled: July 7, 2009Date of Patent: October 23, 2012Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, S.O.I. TEC Silicon On Insulator TechnologiesInventors: Thomas Signamarcheix, Chrystel Deguet, Frederic Mazen
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Publication number: 20120111829Abstract: A method for producing a device, with a graphical element, including: a) producing a stack including at least one sacrificial layer positioned between a first substrate and a protective layer, and a graphical element produced in a first face of the protective layer opposite a second face of the protective layer, such that the second face is positioned against the sacrificial layer; b) attaching the stack to at least one second substrate such that the graphical element is positioned between the first substrate and the second substrate; and c) separating the sacrificial layer from the protective layer.Type: ApplicationFiled: July 20, 2010Publication date: May 10, 2012Applicant: COMMISSARIAT A I'energie atomique et aux ene altInventors: Chrystel Deguet, Alain-Marcel Rey, Thomas Signamarcheix
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Publication number: 20110207293Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.Type: ApplicationFiled: October 29, 2009Publication date: August 25, 2011Inventors: Thomas Signamarcheix, Frank Fournel, Laurent Clavelier, Chrystel Deguet
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Publication number: 20110201177Abstract: A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.Type: ApplicationFiled: October 29, 2009Publication date: August 18, 2011Inventors: Franck Fournel, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Publication number: 20110163410Abstract: A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.Type: ApplicationFiled: June 6, 2008Publication date: July 7, 2011Applicants: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Thomas Signamarcheix, Franck Fournel, Hubert Moriceau
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Publication number: 20110129988Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.Type: ApplicationFiled: July 7, 2009Publication date: June 2, 2011Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Thomas Signamarcheix, Chrystel Deguet, Frederic Mazen
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Publication number: 20100221891Abstract: A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.Type: ApplicationFiled: February 12, 2010Publication date: September 2, 2010Inventors: FRANCK FOURNEL, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Patent number: 7776716Abstract: A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.Type: GrantFiled: May 9, 2007Date of Patent: August 17, 2010Assignees: S.O.I.Tec Silicon on Insulator Technologies, Commissariat à l'Energie Atomique (CEA)Inventors: Chrystel Deguet, Takeshi Akatsu, Hubert Moriceau, Thomas Signamarcheix, Loic Sanchez