Abstract: Embodiments of the present disclosure relate to managing power provided to a semiconductor circuit to prevent undervoltage conditions. A measured voltage value describing a measured supply voltage at a first subcircuit of a semiconductor circuit can be received, the measured voltage value having a first resolution. A selected metric indicative of a supply voltage present at the first subcircuit can be received, the selected metric having a second resolution higher than the first resolution. The selected metric is calibrated to obtain a calibrated metric when a transition of the measured voltage value occurs.

Abstract: Embodiments of the present disclosure relate to detecting undervoltage conditions at a subcircuit. A power supply current of a first subcircuit is determined over a first number of previous clock cycles. A cross current flowing between the first subcircuit and a second subcircuit is determined over the first number of previous clock cycles. An estimated momentary supply voltage present at the first subcircuit is then determined based on the power supply current of the first subcircuit over the first number of previous clock cycles and the cross current flowing between the first subcircuit and the second subcircuit over the first number of previous clock cycles.

Abstract: The invention relates to a method for embedding a discrete electronic device in a chip module. The chip module comprises a multilayer substrate which comprises a plurality of electrically conductive layers stacked above each other and an electrically non-conductive layer arranged between each pair of electrically conductive layers. The chip module is configured to receive one or more chips to be mounted onto a top surface thereof. Each electrically conductive layer comprises one or more electrically conductive structures. A recess is provided in a side surface of the chip module. The discrete electronic device is inserted into the recess. A first electrically conductive connection between a first electrical contact of the discrete electronic device and a first electrically conductive structure is established. Further, a second electrically conductive connection between a second electrical contact of the discrete electronic device and a second electrically conductive structure is established.

Abstract: A semiconductor circuit including a first subcircuit, at least a second subcircuit, and power management circuitry. The power management circuitry is operable for estimating a metric indicative of a momentary supply voltage present at the first subcircuit based on a power supply current of the first subcircuit and a cross current flowing between the first subcircuit and the second subcircuit.

Abstract: Embodiments of the present disclosure relate to detecting undervoltage conditions at a subcircuit. A power supply current of a first subcircuit is determined over a first number of previous clock cycles. A cross current flowing between the first subcircuit and a second subcircuit is determined over the first number of previous clock cycles. An estimated momentary supply voltage present at the first subcircuit is then determined based on the power supply current of the first subcircuit over the first number of previous clock cycles and the cross current flowing between the first subcircuit and the second subcircuit over the first number of previous clock cycles.

Abstract: Embodiments of the present disclosure relate to managing power provided to a semiconductor circuit to prevent undervoltage conditions. A measured voltage value describing a measured supply voltage at a first subcircuit of a semiconductor circuit can be received, the measured voltage value having a first resolution. A selected metric indicative of a supply voltage present at the first subcircuit can be received, the selected metric having a second resolution higher than the first resolution. The selected metric is calibrated to obtain a calibrated metric when a transition of the measured voltage value occurs.

Abstract: A semiconductor circuit including a first subcircuit, at least a second subcircuit, and power management circuitry. The power management circuitry is operable for estimating a metric indicative of a momentary supply voltage present at the first subcircuit based on a power supply current of the first subcircuit and a cross current flowing between the first subcircuit and the second subcircuit.

Abstract: A semiconductor circuit including a first subcircuit, at least a second subcircuit, and power management circuitry. The power management circuitry is operable for estimating a metric indicative of a momentary supply voltage present at the first subcircuit based on a power supply current of the first subcircuit and a cross current flowing between the first subcircuit and the second subcircuit.

Abstract: Provided are embodiments including methods, systems, and computer-program products for mitigating power supply noise using one or more current supplies. In some embodiments, power is provided to an integrated circuit, wherein a first circuit is coupled to the integrated circuit over a first path. A variation of the current level of the integrated circuit may be determined. Additional power from a second circuit is provided to the integrated circuit may be provided based at least in part on the determined variation, wherein the second circuit is coupled to the integrated circuit over a second path.

Abstract: The invention relates to a method for embedding a discrete electronic device in a chip module. The chip module comprises a multilayer substrate which comprises a plurality of electrically conductive layers stacked above each other and an electrically non-conductive layer arranged between each pair of electrically conductive layers. The chip module is configured to receive one or more chips to be mounted onto a top surface thereof. Each electrically conductive layer comprises one or more electrically conductive structures. A recess is provided in a side surface of the chip module. The discrete electronic device is inserted into the recess. A first electrically conductive connection between a first electrical contact of the discrete electronic device and a first electrically conductive structure is established. Further, a second electrically conductive connection between a second electrical contact of the discrete electronic device and a second electrically conductive structure is established.

Abstract: The invention relates to a method for embedding a discrete electronic device in a chip module. The chip module comprises a multilayer substrate which comprises a plurality of electrically conductive layers stacked above each other and an electrically non-conductive layer arranged between each pair of electrically conductive layers. The chip module is configured to receive one or more chips to be mounted onto a top surface thereof. Each electrically conductive layer comprises one or more electrically conductive structures. A recess is provided in a side surface of the chip module. The discrete electronic device is inserted into the recess. A first electrically conductive connection between a first electrical contact of the discrete electronic device and a first electrically conductive structure is established. Further, a second electrically conductive connection between a second electrical contact of the discrete electronic device and a second electrically conductive structure is established.

Abstract: A method for increasing a resolution of an on-chip measurement circuit is provided. The method includes propagating a first signal through the on-chip measurement circuit to generate a first output. The method also includes propagating a second signal through the on-chip measurement circuit to generate a second output. The second signal includes a delay. The method also includes reconciling the first output and the second output to determine the resolution of the on-chip measurement circuit. The resolution of the on-chip measurement circuit increases in correspondence with a fineness of a step of the delay.

Abstract: A method for embedding a discrete electrical device in a printed circuit board (PCB) is provided, which includes: providing a vertical via as a blind hole from a horizontal surface of the PCB to a conductive structure in a first layer, the first layer being one layer of a first core section of a plurality of core sections vertically arranged above each other, each core section including lower and upper conductive layers, and a non-conductive layer in between; inserting the electrical device into the via, with the device extending within at least two of the core sections; establishing a first electrical connection between a first device contact and the conductive structure in the first layer; and establishing a second electrical connection between a second device contact and a second layer, the second layer being one of the conductive layers of a second horizontal core section.

Abstract: A system for layout effect characterization of an integrated circuit includes a memory having computer readable instructions and a processor for executing the computer readable instructions. The computer readable instructions include selecting an adjustable clock setting of an input clock for a layout effect characterization circuit of the integrated circuit and enabling a predetermined duty cycle of the input clock to pass through a plurality of inverting device chains including a reference chain and one or more chains having a different inverting device arrangement and a same number of inverting devices per chain. The computer readable instructions also include measuring a captured output of the one or more chains having the different inverting device arrangement and a captured output of the reference chain.

Abstract: The invention relates to a method for embedding a discrete electronic device in a chip module. The chip module comprises a multilayer substrate which comprises a plurality of electrically conductive layers stacked above each other and an electrically non-conductive layer arranged between each pair of electrically conductive layers. The chip module is configured to receive one or more chips to be mounted onto a top surface thereof. Each electrically conductive layer comprises one or more electrically conductive structures. A recess is provided in a side surface of the chip module. The discrete electronic device is inserted into the recess. A first electrically conductive connection between a first electrical contact of the discrete electronic device and a first electrically conductive structure is established. Further, a second electrically conductive connection between a second electrical contact of the discrete electronic device and a second electrically conductive structure is established.

Abstract: The invention relates to a method for embedding a discrete electronic device in a chip module. The chip module comprises a multilayer substrate which comprises a plurality of electrically conductive layers stacked above each other and an electrically non-conductive layer arranged between each pair of electrically conductive layers. The chip module is configured to receive one or more chips to be mounted onto a top surface thereof. Each electrically conductive layer comprises one or more electrically conductive structures. A recess is provided in a side surface of the chip module. The discrete electronic device is inserted into the recess. A first electrically conductive connection between a first electrical contact of the discrete electronic device and a first electrically conductive structure is established. Further, a second electrically conductive connection between a second electrical contact of the discrete electronic device and a second electrically conductive structure is established.

Abstract: A system for layout effect characterization of an integrated circuit includes a memory having computer readable instructions and a processor for executing the computer readable instructions. The computer readable instructions include selecting an adjustable clock setting of an input clock for a layout effect characterization circuit of the integrated circuit and enabling a predetermined duty cycle of the input clock to pass through a plurality of inverting device chains including a reference chain and one or more chains having a different inverting device arrangement and a same number of inverting devices per chain. The computer readable instructions also include measuring a captured output of the one or more chains having the different inverting device arrangement and a captured output of the reference chain.

Abstract: A semiconductor circuit including a first subcircuit, at least a second subcircuit, and power management circuitry. The power management circuitry is operable for estimating a metric indicative of a momentary supply voltage present at the first subcircuit based on a power supply current of the first subcircuit and a cross current flowing between the first subcircuit and the second subcircuit.

Abstract: A layout effect characterization circuit includes a plurality of inverting device chains including a reference chain and one or more chains having a different inverting device arrangement and a same number of inverting devices per chain. A low pass filter is coupled to an output of the inverting device chains to produce a filtered output. An output capture circuit is coupled to the filtered output to enable a comparison of a captured filtered output of the one or more chains having the different inverting device arrangement to a captured filtered output of the reference chain.

Abstract: A method for increasing a resolution of an on-chip measurement circuit is provided. The method includes propagating a first signal through the on-chip measurement circuit to generate a first output. The method also includes propagating a second signal through the on-chip measurement circuit to generate a second output. The second signal includes a delay. The method also includes reconciling the first output and the second output to determine the resolution of the on-chip measurement circuit. The resolution of the on-chip measurement circuit increases in correspondence with a fineness of a step of the delay.