Abstract: A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

Abstract: An electrical and/or electronic component including at least one electrical outside connecting contact. This contact is a terminal lug, which is attached at one side, for the electrical contacting with a contacting partner. The terminal lug includes a connecting side including a planar connecting surface for the electrical contacting. The exposed end of the terminal lug includes a bending leg, which is bent out of the plane by a compensating angle toward the connecting side. The bending leg includes the connecting surface. The terminal lug is designed such that, when a contacting partner, which is planar at least in this area, makes site contact with the free end of the bending leg with a force applied from the connecting side, a position orientation of the connecting surface is adaptable counter to the compensating angle until a gap-free contact is made between the connecting surface and the planar contacting partner.

Abstract: A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

Abstract: A method for making contact between (i) a semiconductor material having silicon carbide and (ii) a contact layer having nickel oxide includes applying the contact layer to the semiconductor material, and treating at least an interface between the contact layer and the semiconductor material at an elevated temperature. An ohmic contact between the contact layer and the semiconductor material has an improved long-term stability due to an improved adhesion of the nickel to the silicon carbide. The present disclosure furthermore relates to a method for producing a semiconductor component, and to a semiconductor component.

Abstract: A method for forming a contact on a semiconductor substrate includes: applying a metal to an exposed partial area of an outer side of the semiconductor substrate and/or of a layer applied to the semiconductor substrate, the partial area being surrounded by at least one edge region of an insulating layer, and the at least one edge region of the insulating layer being at least partially covered by the metal; heating the semiconductor substrate, whereby the metal which is applied to the exposed partial area reacts with at least one semiconductor material of the partial area to form a semiconductor-metal material as the end material or a further processing material of the at least one contact; and etching using an etching material having a higher etching rate for the metal than for the semiconductor-metal material.

Abstract: A dielectric material for use in electrical energy storage devices includes at least two nanostructures which are each embedded in an electrically insulating matrix made of a material having a bandgap greater than a material of the nanostructures. A probability different from zero of charge carrier tunnelling in parallel to a direction of an electrical field that can be used from outside is set between the two nanostructures.

Abstract: An electronic assembly includes a leadframe (2), a semiconductor component (3), and an electrically conductive connecting element (4) made of a composite material (5). The connecting element (4) has a solderable metallization (6) on the composite material (5) on a surface that is directed towards the semiconductor component (3). A thermal conductivity of the composite material (5) of the connecting element (4) is greater than a thermal conductivity of the semiconductor component (3) and less than a thermal conductivity of the leadframe (2). The connecting element (4) is provided only locally in the region of the semiconductor component (3).

Abstract: The invention relates to an electronic assembly comprising a leadframe (2), a semiconductor component (3), and an electrically conductive connecting element (4) made of a composite material (5). The connecting element (4) has a solderable metallization (6) on the composite material (5) on a surface that is directed towards the semiconductor component (3). A thermal conductivity of the composite material (5) of the connecting element (4) is greater than a thermal conductivity of the semiconductor component (3) and less than a thermal conductivity of the leadframe (2). The connecting element (4) is provided only locally in the region of the semiconductor component (3).