Abstract: A test apparatus using a bore probe card for testing a semiconductor die is disclosed. The bore probe card includes one or more bore probes that operate to bore into the bond pads of the semiconductor die without laterally scrubbing across the surface of the bond pad. The bore probes generally contact the bond pads at approximately 90° and a lateral pattern between the bore probe card and the semiconductor die produces the boring action of the bore probes.

Abstract: A process for testing a semiconductor device includes placing a probe card into a testing apparatus wherein the probe card has a base and a probe tip. The probe tip has a probe end with a first end surface and a first width. The process also includes placing the semiconductor device into the testing apparatus wherein the semiconductor device has an electrode having a second width that is narrower than the first width of the probe end. The process also includes reducing a distance between the base of the probe card and the semiconductor device for a first distance wherein the probe end contacts the electrode and the probe end surface is substantially parallel to a primary surface of the semiconductor device.

Abstract: A prober interface plate is formed as a single body of ceramic material. The plate has highly planar surfaces obtained by machining and polishing the ceramic plate.

Abstract: A system and method for holding a semiconductor wafer substantially flat on a chuck and for cooling the chuck is provided. The system for securing a wafer on a chuck includes first and second conduits, first and second valves, and a first sensor. The first and second conduits each fluidly connect a first plurality of holes in the chuck to a vacuum source. The first and second valves are disposed within the first and second conduits respectively. The first sensor is in fluid communication with one of the first and second valves. The first sensor measures a first vacuum level applied to one of the first and second valves. In operation, one of the first and second valves opens to induce a vacuum force between the first plurality of holes in the chuck and a wafer disposed on the chuck. When the first vacuum level applied to one of the first and second valves is greater than a predetermined vacuum level, the wafer has been partially pulled down against the chuck.

Abstract: A chuck is provided for holding a semiconductor wafer using a suction force. The chuck includes a chuck plate and may further include a manifold plate, and a seal plate to form a laminated chuck configuration. The chuck plate is disposed about a first axis and includes a first contact region disposed on a first side. The chuck plate further includes a first groove within the first contact region extending generally spirally outwardly from a first location proximate to the first axis to a second location within the first contact region. The chuck plate further includes a first plurality of vacuum holes extending from the first groove into the first side of the chuck plate. A method is provided for a probing a test pad on a semiconductor die disposed on a semiconductor wafer and removing an oxide layer disposed on the test pad. A probe needle contacts the test pad and is overdriven less than or equal to 1 micron into the test pad.

Abstract: Large diameter probe tips (42) can be used to probe a semiconductor device (60). The probe tips (42) are oriented more perpendicular to the surface of the semiconductor device (60) and are less likely to cause damage to the semiconductor device (60). The probe tips (42) can be used with a semiconductor device (60) having elongated electrodes (64) such that a small pitch for the electrodes can be used. Small diameter probe tips (102) can also be used and have a reduced likelihood of contacting a passivation layer (36) during probing.

Abstract: Large diameter probe tips (42) can be used to probe a semiconductor device (60). The probe tips (42) are oriented more perpendicular to the surface of the semiconductor device (60) and are less likely to cause damage to the semiconductor device (60). The probe tips (42) can be used with a semiconductor device (60) having elongated electrodes (64) such that a small pitch for the electrodes can be used. Small diameter probe tips (102) can also be used and have a reduced likelihood of contacting a passivation layer (36) during probing.

Abstract: A process for probing a semiconductor wafer involves bringing the bond pads (63) of a semiconductor die (114) into contact with probes (122) of a probe card (120) by moving a probe chuck (110) in the Z-direction. Initial contact is made with "zero-overdrive." The probe chuck is then moved in a small amount in the Z-direction to induce a pressure in the probe. Scrubbing of the probes against the pads is then performed by moving the probe chuck in the X and Y directions. During movement in the X and Y directions, the pressured induced in the probe is released, causing the probe to begin to break through an oxide layer (62) of the bond pad. If the oxide layer is not completely broken, the movement of the probe chuck in the Z and then X & Y directions is repeated until electrical contact between the probes and the bond pads is made.

Abstract: A semiconductor wafer to be tested is placed inside a prober. A probe card (20') is placed inside a specially designed cavity (32) of a prober interface plate (24) that is pre-mounted superjacent to a head plate of the prober. The bottom surface (34) of the cavity provides solid and uniform support for the probe card. The probe card can be lifted out of the cavity whenever a probe card changeover is required. A tester interface plate (60) is pre-mounted to a test head. The tester interface plate has interlocking alignment pins (68 & 68') which are self-aligned into mating chamfered alignment holes (40 & 40') in the prober interface plate. Additionally, these two interface plates have mating interlocking features (46 & 70) for increased stability. The test stack allows the probe card to contact, typically through cantilevered pins; the active surface of the semiconductor wafer, and electrical probing or testing may then be performed on the semiconductor wafer.