Abstract: A storage device may transition from operating in a write-back mode to a write-through mode and may use a transition mode to maintain data integrity on a boot-up. The storage device includes a volatile memory to store acknowledged host data and a persistent memory to store the host data; The storage device may operate in a write-back mode and flush the acknowledged host data in the volatile memory to the persistent memory when a capacitor power is greater than a threshold. The storage device may operate in a write-through transition mode, flush the acknowledged host data in the volatile memory to the persistent memory when the capacitor power is less than the threshold and move to the write-through mode when the acknowledged host data is copied to the persistent memory.

Abstract: A storage device may transition from operating in a write-back mode to a write-through mode and may use a transition mode to maintain data integrity on a boot-up. The storage device includes a volatile memory to store acknowledged host data and a persistent memory to store the host data; The storage device may operate in a write-back mode and flush the acknowledged host data in the volatile memory to the persistent memory when a capacitor power is greater than a threshold. The storage device may operate in a write-through transition mode, flush the acknowledged host data in the volatile memory to the persistent memory when the capacitor power is less than the threshold and move to the write-through mode when the acknowledged host data is copied to the persistent memory.

Abstract: Approaches are presented for adaptively re-compacting data when errors are found during a post-write verify in a non-volatile memory system, such as flash NAND memory. In one example, user data along with corresponding parity data is written into a block of non-volatile memory. After writing in the user data, but prior to writing the corresponding parity data, the user data is checked. For any word lines that fail this post-write verify, the parity data for the block is adjusted to remove the contribution of any failed word lines before this modified parity data is written into the block. The data corresponding to the failed word lines can then be written elsewhere in the memory system.

Abstract: Approaches are presented for adaptively re-compacting data when errors are found during a post-write verify in a non-volatile memory system, such as flash NAND memory. In one example, user data along with corresponding parity data is written into a block of non-volatile memory. After writing in the user data, but prior to writing the corresponding parity data, the user data is checked. For any word lines that fail this post-write verify, the parity data for the block is adjusted to remove the contribution of any failed word lines before this modified parity data is written into the block. The data corresponding to the failed word lines can then be written elsewhere in the memory system.