Abstract: A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial re

Abstract: A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial re

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542, 543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical acutation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: A device and a method for reducing particle exposure to substrates during thermal treatment are disclosed. Semiconductor wafers may be rotated on a device within a process chamber divided into two partial chambers such that a first partial chamber contains the substrate to be thermally treated and a second partial chamber contains at least parts of the rotation device. Between the partial chambers, a flow of gas is set such that gas from the second partial chamber is substantially prevented from passing into the first partial chamber. In this way, particles which are produced by rotation abrasion in the second partial chamber are largely prevented from passing onto the substrate to be thermally treated. This device and this method are particularly advantageous if the rotation is realized by means of a gas drive, wherein the gas used for the rotation can be introduced directly into the second partial chamber.

Abstract: A rapid thermal processing (RTP) chamber, wherein one wall of the chamber supporting a substrate rotates with respect to the rest of the chamber so that the substrate being treated in the RTP chamber is relatively rotated with respect to the lamps heating the substrate.