Abstract: A heat assisted magnetic recording (HAMR) write head includes a main pole, a waveguide, at least one dielectric matrix layer, and a near-field transducer disposed between the waveguide and the main pole. The near-field transducer is embedded in at least one dielectric matrix layer. The near-field transducer includes an antenna and a thermal shunt. The thermal shunt includes a thermal shunt body portion in direct contact with the antenna, and a metallic shunt diffusion barrier laterally surrounding the thermal shunt body portion and disposed between the thermal shunt body portion and the at least one dielectric matrix layer.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A compact magnetic recording head is provided. The recording head includes a write pole and a substantially planar yoke, which is coupled to the write pole. The yoke is configured to support a substantially single vortex configuration of magnetization.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.

Abstract: The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits.

Abstract: A magnetic recording process generally including the steps of determining an initial magnetization direction of a magnetic recording medium, and selectively applying a magnetic field to the magnetic recording medium along an axis substantially perpendicular to an axis of the initial magnetization direction of the recording medium. The magnetic field is selectively applied for a period of time sufficient to switch the magnetization of the magnetic recording medium from its initial magnetization direction to a final magnetization direction substantially anti-parallel to the initial magnetization direction. Typically, the initial and final magnetization directions will be along an easy axis of magnetization of the magnetic recording medium.

Abstract: A magnetic head for generating a magnetic field is provided in which first and second electrical contacts are electrically coupled to a thin film wire. An electrical current is passed between the contacts and through the wire to generate a magnetic field. A focus mechanism is provided to focus the magnetic field and thereby increase the flux density of the magnetic field along a recording edge of the thin film wire.

Abstract: A magnetic recording process generally including the steps of determining an initial magnetization direction of a magnetic recording medium, and selectively applying a magnetic field to the magnetic recording medium along an axis substantially perpendicular to an axis of the initial magnetization direction of the recording medium. The magnetic field is selectively applied for a period of time sufficient to switch the magnetization of the magnetic recording medium from its initial magnetization direction to a final magnetization direction substantially anti-parallel to the initial magnetization direction. Typically, the initial and final magnetization directions will be along an easy axis of magnetization of the magnetic recording medium.

Abstract: A magnetic head for generating a magnetic field for is provided in which first and second electrical contacts are electrically coupled to a thin film wire. An electrical current is passed between the contacts and through the wire to generate a magnetic field. A focus mechanism is provided to focus the magnetic field and thereby increase the flux density of the magnetic field along a recording edge of the thin film wire.

Abstract: A magnetoquenched superconductor device or cell includes a superconductor element disposed on a substrate and a bilayer ferromagnetic film which provides uniaxial switching. The bilayer film is formed by a first ferromagnetic film disposed on and isolated from the superconductor element; and a second ferromagnetic film disposed on and separated from the first ferromagnetic film. The first and second films are magnetically coupled and have magnetizations which are switchable between a parallel relation wherein the films produce additive magnetic fringe fields that form a weak link in a portion of the superconductor element and an antiparallel relation wherein one of the films substantially absorbs the fringe field of the other film and the resultant fringe fields in the vicinity of the superconductor are such that a weak link is not formed in the superconductor. A number of two dimensional memory arrays are provided which use rows and columns of the devices.

Abstract: The instant invention is a switch, comprising: (1) a pathway of a superconductive material; and (2) a ferromagnet, where the ferromagnet is adapted for having at least a first magnetization state and a second magnetization state, where fringe fields from the ferromagnet in the first magnetization state do not exceed a predetermined magnetic field in the superconductive pathway to convert at least a portion of the superconductive pathway to the normal state; where fringe fields from the ferromagnet in the second magnetization state exceed the predetermined magnetic field in the superconductive pathway to convert at least a portion of the superconductive pathway to the normal state.