Abstract: A method of forming a shallow-deep trench isolation (SDTI) is provided that includes the steps of forming a pair of deep trenches through a silicon on insulator (SOI) layer without substantially disturbing an underlying buried oxide (BOX) layer. Once the deep trenches are formed, the trenches are filed with suitable electrical isolating materials, such as undoped poly-silicon or dielectric material, and etched back to obtain a substantially planarized top surface. Subsequently, an active nitride layer is deposited on the planarized top surface, and then a pair of shallow trenches are formed. The shallow trenches are formed using a low selectivity etch to uniformly etch a deep trench liner oxide, the SOI layer and the electrical isolating material which have interfaces at non-perpendicular angles with respect to the direction of the etching. Once the shallow and deep trenches are formed, subsequent processing including filling the shallow trench, annealing and chemical-mechanical polishing can be performed.

Abstract: A printing or marking apparatus comprises a movable marking member having at least one marking device thereon, and a stationary heating structure having at least one heating element for maintaining the marking device at an elevated temperature. At least a portion of the stationary heating structure can be exchanged, removed or modified in order to vary the amount of heat applied to the marking device. In a preferred embodiment, the removable portion comprises a tubular heat pipe which extends into a hollow marking roll, and the heat pipe may be provided in different sizes or in segments which can be added or removed as desired. The disclosed apparatus is of particular utility in connection with ink compositions of the type which are solid at normal room temperatures, and which are rendered liquid or flowable at elevated temperatures.