Patents by Inventor Thomas W. Little

Thomas W. Little has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating a thin film transistor
    Patent number: 5811323
    Abstract: There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
    Type: Grant
    Filed: September 27, 1996
    Date of Patent: September 22, 1998
    Assignee: Seiko Epson Corporation
    Inventors: Mitsutoshi Miyasaka, Thomas W. Little
  • Method for fabricating a thin film semiconductor device
    Patent number: 5637512
    Abstract: There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
    Type: Grant
    Filed: May 2, 1995
    Date of Patent: June 10, 1997
    Assignee: Seiko Epson Corporation
    Inventors: Mitsutoshi Miyasaka, Thomas W. Little
  • Semiconductor device having first and second gate insulating films
    Patent number: 5591989
    Abstract: There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
    Type: Grant
    Filed: August 17, 1994
    Date of Patent: January 7, 1997
    Assignee: Seiko Epson Corporation
    Inventors: Mitsutoshi Miyasaka, Thomas W. Little
  • Method for fabricating a thin film semiconductor
    Patent number: 5504019
    Abstract: There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
    Type: Grant
    Filed: July 7, 1994
    Date of Patent: April 2, 1996
    Assignee: Seiko Epson Corporation
    Inventors: Mitsutoshi Miyasaka, Thomas W. Little
  • Process for fabricating a thin film semiconductor device
    Patent number: 5372958
    Abstract: There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
    Type: Grant
    Filed: November 15, 1991
    Date of Patent: December 13, 1994
    Assignee: Seiko Epson Corporation
    Inventors: Mitsutoshi Miyasaka, Thomas W. Little