Abstract: A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

Abstract: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

Abstract: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

Abstract: A substrate holder for curving a substrate the substrate holding including a fixing plate for fixing the substrate, curving means for curving the fixing plate, wherein the fixing plate is constituted such that the curvature of the substrate can be adjusted in a targeted manner, as well as a corresponding method.

Abstract: A mark field, having at least two location marks with information for the location of the respective location mark in the mark field, and at least one position mark, which is or can be assigned to one of the location marks. Furthermore, the invention relates to a device for determining X-Y positions of structural features of structures arranged on a substrate, wherein the X-Y positions relative to the mark field, which is fixed with respect to the substrate, can be determined. Furthermore, the invention relates to a corresponding method.

Abstract: A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding.

Abstract: A method for aligning and contacting a first substrate with a second substrate using a plurality of detection units and a corresponding device for alignment and contact.

Abstract: A device and a method for the alignment of substrates. The device includes a first substrate holder for receiving a first substrate that has at least two alignment marks, a second substrate holder for receiving a second substrate that has at least two alignment marks, at least one alignment optic for detecting the alignment marks of the first and second substrates, and at least one positioning optic for detecting positioning marks, wherein the alignment marks of the first substrate and the alignment marks of the second substrate can be aligned with one another depending on the positioning marks. The method of alignment includes the steps of fixing the first and second substrates on respective first and second substrate holders, detecting alignment marks on the substrates, detecting positioning marks, and aligning the alignment marks of the substrates with one another in dependence on the positioning marks.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A method for bonding a first substrate to a second substrate on mutually facing contact surfaces of the substrates includes a device in which the first substrate is mounted on a first chuck and the second substrate is mounted on a second chuck. A plate is arranged between the second substrate and the second chuck. The second substrate with the plate is deformed with respect to the second chuck before and/or during the bonding.

Abstract: A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding.

Abstract: A substrate holder having a fixing surface for holding a substrate, a system having such a substrate holder, a use of such a substrate holder, a method for bonding two substrates and a product, particularly a substrate stack, produced using such a method and also a use of such a substrate holder for such a method.

Abstract: A method for bonding a first substrate to a second substrate on mutually facing contact surfaces of the substrates, wherein the first substrate is mounted on a first chuck and the second substrate is mounted on a second chuck, and wherein a plate is arranged between the second substrate and the second chuck, wherein the second substrate with the plate is deformed with respect to the second chuck before and/or during the bonding. Furthermore, the present invention relates to a corresponding device and a corresponding plate.

Abstract: A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

Abstract: A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

Abstract: A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding.

Abstract: A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.