Abstract: The present invention provides compounds of formulae (1) (2) wherein R1 and R2 are C1-30alkyl, C2-3O-alkenyl, C2-30-alkynyl, C5-7-cycloalkyl, C6-14-aryl or 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3O-alkenyl and C2-3O-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alkenyl and O—C2-2O-alkynyl, and wherein C5-7-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C1-20alkyl, C2-2O-alkenyl, C2-2O-alkynyl, O—C1-20-alkyl, O—C2-2o-alkenyl and O—C2-2o-alkynyl, Ra, Rb, Rc and Rd are independently and at each occurrence selected from the group consisting of C1-30alkyl, C2-30-alkenyl, C2-30-alkynyl, C6-14-aryl and 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alken

Abstract: The present invention relates to a nanoelectronic device, comprising a substrate layer (10), a first electrode layer (12) disposed on the substrate layer (10), a dielectric layer (16) disposed on the first electrode layer (12), a second electrode layer (18) disposed on the dielectric layer (16), wherein the dielectric layer (16) and the second electrode layer (18) are dimensioned such that at least one protruding portion (18a, 18b) of the second electrode layer (18) is formed in which the second electrode layer (18) extends beyond the dielectric layer such that opposing faces of the first and second electrode are formed (16), at least one semiconductor layer (20) disposed between the first electrode layer (12), one of the protruding portions (18a, 18b) of the second electrode layer (18) and the dielectric layer (16); and a gating arrangement (22) in contact with at least the semiconductor layer (20) as well as the first (12) and second (18) electrode layers.

Abstract: The present invention provides compounds of formulae (1) (2) wherein R1 and R2 are C1-30alkyl, C2-3O-alkenyl, C2-30-alkynyl, C5-7-cycloalkyl, C6-14-aryl or 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3O-alkenyl and C2-3O-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alkenyl and O—C2-2O-alkynyl, and wherein C5-7-cycloalkyl, C6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C1-20alkyl, C2-2O-alkenyl, C2-2O-alkynyl, O—C1-20-alkyl, O—C2-2o-alkenyl and O—C2-2o-alkynyl, Ra, Rb, Rc and Rd are independently and at each occurrence selected from the group consisting of C1-30alkyl, C2-30-alkenyl, C2-30-alkynyl, C6-14-aryl and 5 to 14 membered heteroaryl, wherein C1-30-alkyl, C2-3o-alkenyl and C2-3o-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C1-20-alkyl, O—C2-20-alken

Abstract: The present invention relates to a method for separating semi-conducting and metallic single-walled carbon nanotubes from each other and, if present, from other carbonaceous material, or for separating semi-conducting or metallic single-walled carbon nanotubes from other carbonaceous material via density separation using a solution of a polytungstate; to semi-conducting or metallic single-walled carbon nanotubes obtained by this method; and to the use of these semi-conducting or metallic single-walled carbon nanotubes.

Abstract: Disclosed are a novel semiconductor composition comprising at least one organic semiconductor in a liquid medium and the use thereof the production of organic semiconductor devices, in particular organic field effect transistors, organic solar cells, light-emitting diodes and sensors.

Abstract: A thin film semiconductor comprising a compound of formula I or II wherein: R1 and R2, at each occurrence, independently are selected from a C1-30 alkyl group, a C2-30 alkenyl group, a C2-30 alkynyl group and a C1-30 haloalkyl group, R3, R4, R5, and R6 independently are H or an electron-withdrawing group, wherein at least one of R3, R4, R5, and R6 is an electron-withdrawing group; and a non-conductive polymer.

Abstract: Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.

Abstract: A thin film semiconductor comprising a compound of formula I or II wherein: R1 and R2, at each occurrence, independently are selected from a C1-30 alkyl group, a C2-30 alkenyl group, a C2-30 alkynyl group and a C1-30 haloalkyl group, R3, R4, R5, and R6 independently are H or an electron-withdrawing group, wherein at least one of R3, R4, R5, and R6 is an electron-withdrawing group; and a non-conductive polymer.

Abstract: Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.

Abstract: The present invention provides compounds of formula (I) wherein X is O, S or NR10, wherein R10 is H, C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl or C(0)-OR11, R1 and R11 are independently from each other selected from the group consisting of C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl, C5-8-cycloalkyl, substituted C5-8-cycloalkyl, C5-8-cycloalkenyl, and substituted C5-8-cycloalkenyl, and an electronic device comprising the compounds as semiconducting material.

Abstract: The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.

Abstract: The present invention provides compounds of formula (I) wherein X is O, S or NR10, wherein R10 is H, C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl or C(0)-OR, R1 and R11 are independently from each other selected from the group consisting of C1-30-alkyl, substituted C1-30-alkyl, C2-30-alkenyl, substituted C2-30-alkenyl, C2-30-alkynyl, substituted C2-30-alkynyl, C5-8-cycloalkyl, substituted C5-8-cycloalkyl, C5-8-cycloalkenyl, and substituted C5-8-cycloalkenyl, and an electronic device comprising the compounds as semiconducting material.

Abstract: The present invention relates to a method for separating semi-conducting and metallic single-walled carbon nanotubes from each other and, if present, from other carbonaceous material, or for separating semi-conducting or metallic single-walled carbon nanotubes from other carbonaceous material via density separation using a solution of a polytungstate; to semi-conducting or metallic single-walled carbon nanotubes obtained by this method; and to the use of these semi-conducting or metallic single-walled carbon nanotubes.

Abstract: The present invention provides compounds of formula (1) wherein o is 1, 2 or 3, p is 0, 1 or 2, n is 0, 1 or 2, m is 0, 1 or 2, and A is a mono- or polycyclic ring system, which may contain at least one heteroatom, and an electronic device comprising the compounds as semiconducting material.

Abstract: Disclosed are a novel semiconductor composition comprising at least one organic semiconductor in a liquid medium and the use thereof the production of organic semiconductor devices, in particular organic field effect transistors, organic solar cells, light-emitting diodes and sensors.

Abstract: A thin film semiconductor comprising a compound of formula I or II wherein: R1 and R2, at each occurrence, independently are selected from a C1-30 alkyl group, a C2-30 alkenyl group, a C2-30 alkynyl group and a C1-30 haloalkyl group, R3, R4, R5, and R6 independently are H or an electron-withdrawing group, wherein at least one of R3, R4, R5, and R6 is an electron-withdrawing group; and a non-conductive polymer.

Abstract: Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.

Abstract: Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.

Abstract: The present invention provides compounds of formula 1 wherein X1 and X2 are independently from each other O, S or Se, and an electronic device comprising the compounds as semiconducting material.

Abstract: The present invention relates to compounds of the formula I wherein X1, X2 are O or C(CN)2; A is selected from wherein, if present, X3, X4 are O or C(CN)2 and m, R4a, R4b, R5a, R5b, R6a, R6b, R6c, R6d, R7a, R7a, R8a, R8b, R9, R10a, R10b, Rm1, Rm2, Rm3 and Rm4 are as defined in the claims and description. The present invention also relates to a method for their preparation and their use as semiconductors, in particular as semiconductors in organic electronics and organic photovoltaics.