Abstract: Direct thermal decomposition of hydrocarbons into solid carbon and hydrogen is performed by a process and a device. The process comprises preheating a hydrocarbon gas stream to a temperature between 500° C. and 700° C. and injecting the pre-heated hydrocarbon gas stream into the reactor pool of a liquid metal reactor containing a liquid media; forming a multi-phase flow with a hydrocarbon gas comprising hydrogen and solid carbon at a temperature between 900° C. and 1200° C.; forming a carbon layer on the free surface of the liquid media made up of solid carbon particles which are then displaced into at least one carbon extraction system and at least one recipient for collecting them; and, at the same time, the gas comprising hydrogen leaves the reactor pool through a porous rigid section, being collected at a gas outlet collector from where the gas comprising hydrogen finally leaves the liquid metal reactor.

Abstract: An electrical device, e.g., an inverter or converter, includes a first and a second printed circuit board. The first printed circuit board includes protruding tab regions, and a respective tab region protrudes into a respective recess of the second printed circuit board. Contact pins, e.g., of one or more plug connector parts, protrude into holes of the second printed circuit board.

Abstract: In an electrical device and method for producing a first and second electrical device from a construction kit, the electrical device includes a heat sink having a contact surface, on which a power module is arranged. A frame part of the electrical device is arranged on the contact surface, the power module is accommodated in the frame part, and the frame part is delimited by a bulge of the heat sink protruding at the edge of the contact surface.

Abstract: Direct thermal decomposition of hydrocarbons into solid carbon and hydrogen is performed by a process and a device. The process comprises preheating a hydrocarbon gas stream to a temperature between 500° C. and 700° C. and injecting the pre-heated hydrocarbon gas stream into the reactor pool of a liquid metal reactor containing a liquid media; forming a multi-phase flow with a hydrocarbon gas comprising hydrogen and solid carbon at a temperature between 900° C. and 1200° C.; forming a carbon layer on the free surface of the liquid media made up of solid carbon particles which are then displaced into at least one carbon extraction system and at least one recipient for collecting them; and, at the same time, the gas comprising hydrogen leaves the reactor pool through a porous rigid section, being collected at a gas outlet collector from where the gas comprising hydrogen finally leaves the liquid metal reactor.

Abstract: The disclosed embodiments relate to a system for providing remote tuning and clock synchronization in a network. The system includes a device that receives a signal that includes a plurality of channels, a device that receives a user request indicative of a desire to view at least one of the plurality of channels, and a filter that filters the received signal and transmits a user signal corresponding to the at least one of the plurality of channels to the user.

Abstract: A converter assembly, a method for producing a converter assembly and a method for operating a converter assembly are described, in which a base module includes power electronics and control electronics. The base module includes a housing, particularly a housing part at least partially forming a housing for the power electronics and control electronics. The base module includes an electrical and mechanical interface, via which signal electronics are able to be joined to the base module with form-locking and/or force-locking, in order to form the converter assembly. The signal electronics include a housing, especially so that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly. A setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value.

Abstract: The disclosed embodiments relate to a system for providing remote tuning and clock synchronization in a network. The system includes a device that receives a signal that includes a plurality of channels, a device that receives a user request indicative of a desire to view at least one of the plurality of channels, and a filter that filters the received signal and transmits a user signal corresponding to the at least one of the plurality of channels to the user.

Abstract: The disclosed embodiments relate to a system for providing remote tuning and clock synchronization in a network. The system includes a device that receives a signal that includes a plurality of channels, a device that receives a user request indicative of a desire to view at least one of the plurality of channels, and a filter that filters the received signal and transmits a user signal corresponding to the at least one of the plurality of channels to the user.

Abstract: A WLAN compliant device which comprises a VCX), a MAC, a decoder which outputs video wherein said device compares time stamps to obtain a difference.

Abstract: A system for multiplexing a transport packet and an Ethernet packet comprises a transport interface for receiving a transport stream comprising the transport packet and a network interface for receiving a network stream comprising the Ethernet packet. The system comprises a packet identifier coupled to the transport interface for filtering the transport stream and selecting the transport packet and a date formatter coupled to the network interface for creating a transport header appended to the Ethernet packet. The system further comprises a multiplexer for receiving the transport packet from the packet identifier, for receiving the Ethernet packet from the data formatter, and for multiplexing the transport packet and the Ethernet packet comprising the transport header.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method and an apparatus using a system level clocking scheme to remove jitter from multi-media packets distributed over an asynchronous network, in particular an Ethernet network. The present invention overcomes the problems associated with jitter introduced in an Ethernet network by using various time stamps to synchronize a client device clock to a headend clock and to control the data flow in the client device to match the rate that the data is received by a broadband receiver coupled to the headend. A first time stamp is prepended to the transport packets when the packets are received from the headend. A second time stamp is placed in the data frame when the data frame is placed on the network. A third time stamp is placed in the data frame when the data frame is received from the network. The second and third time stamps are used for clock synchronization and the first time stamp is used for data flow control.

Abstract: A method and apparatus for compensating for frequency drift in an LNB by storing the frequency offset of each LNB with respect to each channel. When a channel is selected, a particular LNB is activated and the table of offset values is consulted. The offset value for the LNB and channel is used to tune the LNB to a frequency that is appropriate for receiving the selected channel.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method and apparatus for ensuring a correct satellite signal connection. Specifically, a user selects a satellite signal via an integrated receiver/decoder (IRD) from at least one satellite, and the IRD sends a command signal to a selector switch to acquire and lock onto said satellite signal. The IRD repeats transmission of the command signal to the selector switch once the IRD has acquired and locked onto said information signal. Thus, in the event that the selector switch failed to switch to a low noise block converter (LNB) corresponding to the initial command signal, then the repeated command signal helps to ensure that the selector switch switches to the LNB corresponding with the latest command signal sent by the IRD.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method and an apparatus using a system level clocking scheme to remove jitter from multi-media packets distributed over an asynchronous network, in particular an Ethernet network. The present invention overcomes the problems associated with jitter introduced in an Ethernet network by using various time stamps to synchronize a client device clock to a headend clock and to control the data flow in the client device to match the rate that the data is received by a broadband receiver coupled to the headend. A first time stamp is prepended to the transport packets when the packets are received from the headend. A second time stamp is placed in the data frame when the data frame is placed on the network. A third time stamp is placed in the data frame when the data frame is received from the network. The second and third time stamps are used for clock synchronization and the first time stamp is used for data flow control.

Abstract: A scanner having a serviceable circuit board assembly with a stair-stepping configuration. The scanner has a card cage for mounting circuit boards in the rear of the scanner. The card cage has an access opening. A first circuit board and a second circuit board are mounted inside the card cage. The first circuit board forms a notch. The second circuit board has a viewable portion that is viewable and accessible through the access opening and the notch. The test points and light emitting diodes are positioned within the viewable portion of the second circuit board.

Abstract: A method for forming a dual inlaid contact structure (damascene) begins by etching dual inlaid contact structures (32, 34, and 36). Masking layers (28) are (228) and the deposition of low-K dielectric material 26 is used to selectively form low-K regions (30) only in critical areas where low-K dielectric material is absolutely needed. Other portions of the wafer remain covered with conventional oxide (24) so that adverse impacts of low-K dielectric material is minimized. Conductive material (38, 40, and 42) is then formed to complete dual inlaid contact structures whereby low-K dielectric plugs (30) reduce cross talk and capacitance within the final structure.

Abstract: An interconnect structure having a dielectric layer with low dielectric constant is formed within an integrated circuit. In one embodiment of the invention, portions of a silicon dioxide layer (18) lying adjacent to a conductive interconnect (21) are removed to expose portions of a silicon nitride etch stop layer (16). A dielectric layer (22) having a low dielectric constant is then formed overlying the conductive interconnect (21) and the exposed portions of the silicon nitride etch stop layer (16). A portion of the dielectric layer (22) is then removed to expose the top surface of the conductive interconnect (21) to leave portions of the dielectric layer (22) between adjacent conductive interconnects (21). The resulting interconnect structure has reduced cross-talk between conductive interconnects (21) while avoiding prior art disadvantages of reduced thermal dissipation and increased mechanical stress.