Abstract: In an electrical device and method for producing a first and second electrical device from a construction kit, the electrical device includes a heat sink having a contact surface, on which a power module is arranged. A frame part of the electrical device is arranged on the contact surface, the power module is accommodated in the frame part, and the frame part is delimited by a bulge of the heat sink protruding at the edge of the contact surface.

Abstract: Direct thermal decomposition of hydrocarbons into solid carbon and hydrogen is performed by a process and a device. The process comprises preheating a hydrocarbon gas stream to a temperature between 500° C. and 700° C. and injecting the pre-heated hydrocarbon gas stream into the reactor pool of a liquid metal reactor containing a liquid media; forming a multi-phase flow with a hydrocarbon gas comprising hydrogen and solid carbon at a temperature between 900° C. and 1200° C.; forming a carbon layer on the free surface of the liquid media made up of solid carbon particles which are then displaced into at least one carbon extraction system and at least one recipient for collecting them; and, at the same time, the gas comprising hydrogen leaves the reactor pool through a porous rigid section, being collected at a gas outlet collector from where the gas comprising hydrogen finally leaves the liquid metal reactor.

Abstract: An electrical device, e.g., an inverter or converter, includes a first and a second printed circuit board. The first printed circuit board includes protruding tab regions, and a respective tab region protrudes into a respective recess of the second printed circuit board. Contact pins, e.g., of one or more plug connector parts, protrude into holes of the second printed circuit board.

Abstract: In an electrical device and method for producing a first and second electrical device from a construction kit, the electrical device includes a heat sink having a contact surface, on which a power module is arranged. A frame part of the electrical device is arranged on the contact surface, the power module is accommodated in the frame part, and the frame part is delimited by a bulge of the heat sink protruding at the edge of the contact surface.

Abstract: Direct thermal decomposition of hydrocarbons into solid carbon and hydrogen is performed by a process and a device. The process comprises preheating a hydrocarbon gas stream to a temperature between 500° C. and 700° C. and injecting the pre-heated hydrocarbon gas stream into the reactor pool of a liquid metal reactor containing a liquid media; forming a multi-phase flow with a hydrocarbon gas comprising hydrogen and solid carbon at a temperature between 900° C. and 1200° C.; forming a carbon layer on the free surface of the liquid media made up of solid carbon particles which are then displaced into at least one carbon extraction system and at least one recipient for collecting them; and, at the same time, the gas comprising hydrogen leaves the reactor pool through a porous rigid section, being collected at a gas outlet collector from where the gas comprising hydrogen finally leaves the liquid metal reactor.

Abstract: A converter assembly, a method for producing a converter assembly and a method for operating a converter assembly are described, in which a base module includes power electronics and control electronics. The base module includes a housing, particularly a housing part at least partially forming a housing for the power electronics and control electronics. The base module includes an electrical and mechanical interface, via which signal electronics are able to be joined to the base module with form-locking and/or force-locking, in order to form the converter assembly. The signal electronics include a housing, especially so that after being joined, the housing of the signal electronics and the housing of the base module together form a housing of the converter assembly. A setpoint value for speed and/or torque is transmittable electrically via the interface, the signal electronics having means for receiving, determining and/or inputting the setpoint value.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm?3 to 7.2*1017 cm?3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Abstract: A scanner having a serviceable circuit board assembly with a stair-stepping configuration. The scanner has a card cage for mounting circuit boards in the rear of the scanner. The card cage has an access opening. A first circuit board and a second circuit board are mounted inside the card cage. The first circuit board forms a notch. The second circuit board has a viewable portion that is viewable and accessible through the access opening and the notch. The test points and light emitting diodes are positioned within the viewable portion of the second circuit board.