Abstract: The loop bandwidth of a PLL is adjusted based on a difference between the output signal of the PLL and the PLL reference signal. In an embodiment, the DC open loop gain and natural frequency of the PLL are adjusted based on the phase difference between the output signal and the reference signal, so that the loop bandwidth of the PLL is increased when the phase difference is outside a programmable range and is decreased when the phase difference is within the programmable range.

Abstract: Wafer sort data can be converted to binary data, whereby each integrated circuit of the wafer is assigned a value of one or zero, depending on whether test data indicates the integrated circuit complies with a specification. In addition, each integrated circuit is assigned position data to indicate its position on the wafer. A frequency transform, such as a multidimensional discrete Fourier transform (DFT), is applied to the binary wafer sort data and position data to determine a spatial frequency spectrum that indicates error patterns for the wafer. The spatial frequency spectrum can be analyzed to determine the characteristics of the wafer formation process that resulted in the errors, and the wafer formation process can be modified to reduce or eliminate the errors.

Abstract: An apparatus includes a telescopic operational amplifier. The telescopic operational amplifier includes an input stage, a load, and a first cascode circuit. The first cascode circuit is coupled to a first differential node and an output node. The first differential node is coupled to one of the input stage and the load. The apparatus includes a first negative transconductance circuit coupled to the first differential node. In at least one embodiment, the first negative transconductance circuit is operable to provide a negative transconductance to compensate at least a first component of an output resistance of the telescopic operational amplifier. In at least one embodiment, the first negative transconductance circuit includes a pair of cross-coupled devices coupled to the first differential node and a current source.

Abstract: An apparatus includes a telescopic operational amplifier. The telescopic operational amplifier includes an input stage, a load, and a first cascode circuit. The first cascode circuit is coupled to a first differential node and an output node. The first differential node is coupled to one of the input stage and the load. The apparatus includes a first negative transconductance circuit coupled to the first differential node. In at least one embodiment, the first negative transconductance circuit is operable to provide a negative transconductance to compensate at least a first component of an output resistance of the telescopic operational amplifier. In at least one embodiment, the first negative transconductance circuit includes a pair of cross-coupled devices coupled to the first differential node and a current source.

Abstract: In an embodiment, a bias generator circuit comprises a first circuit and a second circuit. The first circuit includes a first input coupled to a voltage source and a first output that provides a first output current having a substantially non-zero temperature coefficient. The first circuit comprises a first transistor and a second transistor. The second circuit includes a second input that receives the first output current from the first circuit and a second output that provides a second output current. The second circuit comprises a third transistor and a fourth transistor. The second output current has a substantially zero temperature coefficient dependent on (i) a difference between an effective channel size of the first transistor and an effective channel size of the second transistor, and (ii) a difference between an effective channel size of the third transistor and an effective channel size of the fourth transistor.

Abstract: In an embodiment, a bias generator circuit comprises a first circuit and a second circuit. The first circuit includes a first input coupled to a voltage source and a first output that provides a first output current having a substantially non-zero temperature coefficient. The first circuit comprises a first transistor and a second transistor. The second circuit includes a second input that receives the first output current from the first circuit and a second output that provides a second output current. The second circuit comprises a third transistor and a fourth transistor. The second output current has a substantially zero temperature coefficient dependent on (i) a difference between an effective channel size of the first transistor and an effective channel size of the second transistor, and (ii) a difference between an effective channel size of the third transistor and an effective channel size of the fourth transistor.

Abstract: A fully differential distributed amplifier for providing a high frequency, high power output. The inherent base-collector capacitance of the output power transistors of each distributed amplifier is matched with on-chip inductances to create artificial transmission lines for both the input and output paths. The distributed amplifier circuit may be used as a driver for a Mach-Zehnder optical modulator. In this application an output of 3 V peak-to-peak per modulator arm is delivered at 10 Gb/s.

Abstract: A 2-level logic `current injection` circuit topology suitable for heterojunction bipolar transistor (HBT) technology. The circuit requires lower supply voltage headroom and demonstrates smaller propagation delay than conventional 2-level emitter coupled logic/current mode logic (ECL/CML). Master-slave flip-flop circuits have been fabricated in AlGaAs/GaAs, HBT. Test results indicate that the circuits are fully functional at 10 Gbit/s and an operating clock frequency as high as 20 GHz is recorded.

Abstract: A method for increasing the optical transmission characteristics of zinc sulfide in the visible and infrared portions of electromagnetic spectrum is described. Materials such as metals and, in particular, transition metals are diffused through the zinc sulfide material over a duration of time sufficient to cause the material to turn substantially water clear and substantially colorless.

Abstract: A technique for increasing the strength of long wavelength infrared material, such as zinc sulfide and zinc selenide includes diffusing species which are applied to the materials as thin films into the zinc sulfide and zinc selenide material. Portions of the thin film material are thermally diffused to substantial depths of up to 100 microns below the depth of flaws formed in the body using one of two diffusion techniques. One diffusion technique uses hot isostatic pressure and the other uses a heat treatment carried out at or near ambient pressure in an inert atmosphere, such as argon or other suitable inert gas.

Abstract: A control system including a controller for reading temperature values from sensors in a gas turbine, determining the reliability of the sensors, and issuing a fuel control signal for use in controlling the turbine is disclosed. The fuel control signal has a calculated value which is a function of the turbine operating temperature derived from the values of temperature signals generated by the sensors.

Abstract: A fluid flow control system for controlling the flow of fluid through a valve is disclosed. The control system controls the flow of fluid through the valve by varying the position of the valve. The control system performs this function in such a manner that the change in position of the valve at all times remains sufficiently bounded so as to ensure that the actual flow of fluid through the valve is substantially equal to the flow predicted by the static flow equation for the valve.