Abstract: The invention relates to a massage insole driven by intelligent sensing motor which includes a structurally symmetrical left insole and right insole. The left insole and the right insole each includes a massaging mechanism for massaging the sole of the foot, and a receiving pad body for receiving the massaging mechanism and a control mechanism. The control mechanism is arranged in the receiving pad body. The massaging mechanism includes a massage bead chain, a driving component for driving the massage bead chain to rotate, a reset component for driving the massage bead chain to be reset. Two ends of massage bead chain are respectively sleeved on the driving component and the reset component. The control mechanism includes a control chip, a timing component and a thermostatic component. The driving component, the timing component and the thermostat component are electrically connected to the control chip.

Abstract: A method is provided for operating a non-volatile storage system that includes a plurality of bit lines, a word line comb including a plurality of word lines, and a plurality of memory elements, each memory element coupled between one of the bit lines and one of the word lines. The method includes receiving a current conducted by the word line comb, estimating a resistance of a conductive path between the word line comb and a selected word line voltage node, and generating a voltage at the selected word line voltage node based on the received current and the estimated resistance so that a voltage of the word line comb substantially equals a reference voltage.

Abstract: A resistance-switching memory cell is programmed in a set or reset operation which tests the stability of the cell. A first programming phase using program voltages which increase in magnitude or duration until a program verify test is passed. A stability test phase is then performed to evaluate a stability of the memory cell. The stability test phase determines whether the memory cell is weak and likely to transition out of the set or reset state by applying one or more disturb pulses and performing one or more stability verify tests. The disturb pulses can have a reduced magnitude or duration compared to the program voltages. If the stability test phase indicates the memory cell is not stable, a second programming phase is performed. If the stability test phase indicates the memory cell is stable, the operation is concluded.

Abstract: A resistance-switching memory cell is programmed in a set or reset operation which tests the stability of the cell. A first programming phase using program voltages which increase in magnitude or duration until a program verify test is passed. A stability test phase is then performed to evaluate a stability of the memory cell. The stability test phase determines whether the memory cell is weak and likely to transition out of the set or reset state by applying one or more disturb pulses and performing one or more stability verify tests. The disturb pulses can have a reduced magnitude or duration compared to the program voltages. If the stability test phase indicates the memory cell is not stable, a second programming phase is performed. If the stability test phase indicates the memory cell is stable, the operation is concluded.

Abstract: Disparate clock domains are resynchronized after circuits in one of the clock domains awake from a reduced power state. Parallel test data is routed from a core circuit to a parallel-to-serial converter in an input/output (I/O) circuit. The parallel-to-serial converter clocks the parallel test data in response to a load signal. The load signal is varied until the clock domains are synchronized.

Abstract: A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.

Abstract: A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.

Abstract: A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.

Abstract: An integrated circuit includes current mode drivers that provide equalized outputs. A parallel-to-serial converter circuit receives data at less than one fourth the output data rate, and provides main data and equalization data at one fourth the output data rate to at least one four-to-one multiplexer. The main data and equalization data is multiplexed onto an output node at the output data rate.

Abstract: Disparate clock domains are resynchronized after circuits in one of the clock domains awake from a reduced power state. Parallel test data is routed from a core circuit to a parallel-to-serial converter in an input/output (I/O) circuit. The parallel-to-serial converter clocks the parallel test data in response to a load signal. The load signal is varied until the clock domains are synchronized.

Abstract: Disparate clock domains are resynchronized after circuits in one of the clock domains awake from a reduced power state. Parallel test data is routed from a core circuit to a parallel-to-serial converter in an input/output (I/O) circuit. The parallel-to-serial converter clocks the parallel test data in response to a load signal. The load signal is varied until the clock domains are synchronized.

Abstract: A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.

Abstract: An integrated circuit provides equalized outputs. Main data and equalization data is produced at one fourth of the output data rate, and multiplexed onto an output node at the output data rate.