Patents by Inventor Thorsten Bernd Lill

Thorsten Bernd Lill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240044422
    Abstract: Non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum applications are disclosed. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valves.
    Type: Application
    Filed: October 18, 2023
    Publication date: February 8, 2024
    Inventors: Mariusch Gregor, Theodoros Panagopoulos, Thorsten Bernd Lill
  • Patent number: 11796085
    Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: October 24, 2023
    Assignee: Lam Research Corporation
    Inventors: Mariusch Gregor, Theodoros Panagopoulos, Thorsten Bernd Lill
  • Publication number: 20230326761
    Abstract: Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.
    Type: Application
    Filed: December 10, 2021
    Publication date: October 12, 2023
    Inventors: Andreas Fischer, Thorsten Bernd Lill
  • Publication number: 20230274939
    Abstract: Semiconductor processing methods and apparatuses are provided. Some methods include providing a substrate to a processing chamber, the substrate having a semiconductor portion and a dielectric portion, modifying the semiconductor portion of the substrate selective to the dielectric portion of the substrate by flowing a first process gas comprising a first halogen species onto the substrate and providing a first activation energy to cause the first halogen species to preferentially adsorb on the semiconductor portion relative to the dielectric portion to form a first halogenated semiconductor, and removing the first halogenated semiconductor by flowing a second process gas comprising a second halogen species onto the substrate and providing a second activation energy, without providing a plasma, to cause the second halogen species to react with the first halogenated semiconductor and cause the first halogenated semiconductor to desorb from the substrate.
    Type: Application
    Filed: August 20, 2021
    Publication date: August 31, 2023
    Inventors: Thorsten Bernd Lill, Andreas Fischer, Aaron Lynn Routzahn
  • Publication number: 20230274949
    Abstract: Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.
    Type: Application
    Filed: March 15, 2022
    Publication date: August 31, 2023
    Inventors: Aaron Lynn Routzahn, Andreas Fischer, Thorsten Bernd Lill
  • Publication number: 20230143057
    Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.
    Type: Application
    Filed: March 1, 2021
    Publication date: May 11, 2023
    Inventors: John HOANG, Meihua SHEN, Thorsten Bernd LILL, Hui-Jung WU, Aaron Lynn ROUTZAHN, Francis Sloan ROBERTS
  • Publication number: 20230093011
    Abstract: Molybdenum is etched in a highly controllable manner by performing one or more etch cycles, where each cycle involves exposing the substrate having a molybdenum layer to an oxygen-containing reactant to form molybdenum oxide followed by treatment with boron trichloride to convert molybdenum oxide to a volatile molybdenum oxychloride with subsequent treatment of the substrate with a fluorine-containing reactant to remove boron oxide that has formed in a previous reaction, from the surface of the substrate. In some embodiments the method is performed in an absence of plasma and results in a substantially isotropic etching. The method can be used in a variety of applications in semiconductor processing, such as in wordline isolation in 3D NAND fabrication.
    Type: Application
    Filed: March 2, 2021
    Publication date: March 23, 2023
    Inventors: Andreas Fischer, Aaron Lynn Routzahn, Thorsten Bernd Lill, Seshasayee Varadarajan
  • Publication number: 20220252183
    Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.
    Type: Application
    Filed: July 23, 2020
    Publication date: August 11, 2022
    Inventors: Mariusch Gregor, Theodoros Panagopoulos, Thorsten Bernd Lill
  • Publication number: 20220051938
    Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.
    Type: Application
    Filed: September 10, 2019
    Publication date: February 17, 2022
    Inventors: Hui-Jung Wu, Bart J. van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri