Patents by Inventor Thorsten Obernhuber

Thorsten Obernhuber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a copper connection between two sides of a substrate
    Patent number: 8227340
    Abstract: A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: July 24, 2012
    Assignee: Infineon Technologies AG
    Inventors: Uwe Seidel, Thorsten Obernhuber, Albert Birner, Georg Ehrentraut
  • Method for Producing an Electrically Conductive Connection
    Publication number: 20100279503
    Abstract: A method for producing an electrically conductive connection between a first surface of a semiconductor substrate and a second surface of the semiconductor substrate includes producing a hole, forming an electrically conductive layer that includes tungsten, removing the electrically conductive layer from the first surface of the semiconductor substrate, filling the hole with copper and thinning the semiconductor substrate. The hole is produced from the first surface of the semiconductor substrate into the semiconductor substrate. The electrically conductive layer is removed from the first surface of the semiconductor substrate, wherein the electrically conductive layer remains at least with reduced thickness in the hole. The semiconductor substrate is thinned starting from a surface, which is an opposite surface of the first surface of the semiconductor substrate, to obtain the second surface of the semiconductor substrate with the hole being uncovered at the second surface of the semiconductor substrate.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 4, 2010
    Inventors: Uwe Seidel, Thorsten Obernhuber, Albert Birner, Georg Ehrentraut