Patents by Inventor Thorsten Passow

Thorsten Passow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflective contact layer system for an optoelectronic component and method for producing same
    Patent number: 9196789
    Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: November 24, 2015
    Assignees: OSRAM Opto Semiconductors GmbH, Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventors: Matthias Peter, Simeon Katz, Jürgen Off, Korbinian Perzlmaier, Kai Gehrke, Rolf Aidam, Jürgen Däubler, Thorsten Passow
  • Reflective Contact Layer System for an Optoelectronic Component and Method for Producing Same
    Publication number: 20150270437
    Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.
    Type: Application
    Filed: July 24, 2013
    Publication date: September 24, 2015
    Inventors: Matthias Peter, Simeon Katz, Jürgen Off, Korbinian Perzlmaier, Kai Gehrke, Rolf Aidam, Jürgen Däubler, Thorsten Passow