Abstract: Described herein is an aqueous resin dispersion (AD) including a resin component (R) including at least one di- and/or polyfunctional monomeric primary and/or secondary amine (M) and polyfunctional polymeric organic amines having primary and/or secondary amino groups. Also described herein is an aqueous two-component coating composition including the resin dispersion.

Abstract: Described herein is an aqueous resin dispersion (AD) including a resin component (R) including at least one di- and/or polyfunctional monomeric primary and/or secondary amine (M) and polyfunctional polymeric organic amines having primary and/or secondary amino groups. Also described herein is an aqueous two-component coating composition including the resin dispersion.

Abstract: In a method of adjusting an optical parameter of an exposure apparatus, a photolithographic projection is performed using an exposure apparatus and using a layout pattern so as to provide measured layout data with different focus settings of the exposure apparatus. An optical model is provided including at least one optical parameter and a simulated image is created by using the optical model and the layout pattern. The optical model is optimized by modifying the optical parameter.

Abstract: An imaging system having a dipole diaphragm (2) having two diaphragm openings (2b) arranged one behind the other in a dipole axis (y), and a mask having mask structures (20, 23) is used for producing semiconductor structures (10?, 13?) on a wafer (15?) by imaging the mask (25) onto the wafer (15?). The dipole diaphragm (2) is provided for the imaging of the mask (25), and the mask (25), for producing main semiconductor structures (10; 10?) on the wafer (15?), has main mask structures (20) parallel to an imaging axis (x) running perpendicular to the dipole axis (y). At least one connecting mask structure (23?) oriented obliquely with respect to the dipole axis (y) at least in sections is formed on the mask (25), which structure connects at least two main mask structures (20) to one another.

Abstract: A method is used to produce semiconductor patterns (10?, 13?) on a wafer (15?). For this purpose, a mask (25) and a dipole aperture (2) with two aperture openings (2b) arranged behind one another in a dipole axis (y) are used. The mask (25) is imaged on the wafer (15?) by means of the dipole aperture (2) and, by the imaging of the mask (25) on the wafer (15?), main semiconductor patterns (10?) are produced which are aligned perpendicularly to the dipole axis (y) and in parallel with an imaging axis (x). A second mask (35) with at least one connecting mask pattern (33) is imaged on the wafer (15?) by means of a second aperture (6), as a result of which a connecting semiconductor pattern (13) is produced on the wafer (15?), by means of which at least two of the main semiconductor patterns (10?) are connected to one another.

Abstract: The invention relates to a method for detecting reactions and conformational changes of analytes in a sample by coincidence analysis, as follows: the sample is marked with at least two different fluorescent dyes and then illuminated with at least one laser in order to stimulate the emission of fluorescence; the fluorescence signals are detected by at least two detection units and each signal is broken down into any simultaneous time segments with the desired time slot widths; the number of signals contained in at least one time segment and/or the time intervals between signals in the time segments are detected; a coincidence analysis of the data detected is carried out for at least one time segment of the first detection unit with at least one isochronous time segment of the second detection unit; statistics are produced showing the results of the coincidence analysis and/or the results are subjected to a threshold value analysis, and these statistics or a combination of more statistics are evaluated for the