Patents by Inventor Thuneo Thukakoshi

Thuneo Thukakoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductivity modulated MOSFET
    Patent number: 6025622
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: June 25, 1998
    Date of Patent: February 15, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductivity modulated MOSFET
    Patent number: 5780887
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: June 14, 1994
    Date of Patent: July 14, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductivity modulated MOSFET
    Patent number: 5286984
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: November 27, 1991
    Date of Patent: February 15, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductivity modulated MOSFET
    Patent number: 5093701
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: January 21, 1988
    Date of Patent: March 3, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductivity modulated MOSFET
    Patent number: 5086323
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: June 10, 1991
    Date of Patent: February 4, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Lateral conductivity modulated MOSFET
    Patent number: 4928155
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: June 10, 1988
    Date of Patent: May 22, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductive modulated MOSFET
    Patent number: 4881120
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: November 4, 1987
    Date of Patent: November 14, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Lateral conductivity modulated MOSFET
    Patent number: 4782372
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: February 26, 1987
    Date of Patent: November 1, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi
  • Conductivity modulated MOSFET
    Patent number: 4672407
    Abstract: A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
    Type: Grant
    Filed: May 28, 1985
    Date of Patent: June 9, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi