Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include a front side and back side opposing the front side, the integrated circuit structure comprising: a through-silicon-via (TSV) at least partially within a dielectric layer extending away from the front side; a first metal adjacent to the TSV and within the dielectric layer, the first metal being substantially surrounded by a first seed layer; a conductive pad over the first metal and the TSV and extending away from the front side, wherein the conductive pad provides electrical connection between the TSV and the first metal and includes a second seed layer substantially surrounding a second metal, wherein the second seed layer separates the second metal from the first metal and the TSV.

Abstract: The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).

Abstract: The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).

Abstract: The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).

Abstract: The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).