Abstract: The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

Abstract: The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.

Abstract: The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.

Abstract: The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

Abstract: According to one embodiment, an organic light emitting device is described including a first light emitting unit, a second light emitting unit and a charge generation layer wherein the second light emitting unit is stacked over the first light emitting unit and is connected to the first light emitting unit by means of the charge generation layer and wherein the charge generation layer includes an electron transport layer, a transition metal oxide layer arranged over the electron transport layer and a diffusion suppressing layer arranged between the electron transport layer and the transition metal oxide layer to separate the electron transport layer from the transition metal oxide layer.

Abstract: A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

Abstract: Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques.

Abstract: A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

Abstract: A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.

Abstract: According to one embodiment, an organic light emitting device is described including a first light emitting unit, a second light emitting unit and a charge generation layer wherein the second light emitting unit is stacked over the first light emitting unit and is connected to the first light emitting unit by means of the charge generation layer and wherein the charge generation layer includes an electron transport layer, a transition metal oxide layer arranged over the electron transport layer and a diffusion suppressing layer arranged between the electron transport layer and the transition metal oxide layer to separate the electron transport layer from the transition metal oxide layer.

Abstract: Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques.

Abstract: A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.

Abstract: A method for configuring an automated in-circuit test debugger is presented. The novel test debug and optimization configuration technique configures expert knowledge into a knowledge framework for use by an automated test debug and optimization system for automating the formulation of a valid stable in-circuit test for execution on an integrated circuit tester. In a system that includes a rule-based controller for controlling interaction between the test-head controller of an integrated circuit tester and an automated debug system, the invention includes a knowledge framework and a rule-based editor. The knowledge framework stores test knowledge in the representation of rules that represent a debugging strategy. The rule-based editor facilitates the use of rules as knowledge to debug or optimize an in-circuit test that is to be executed on the integrated circuit tester.

Abstract: A method and apparatus for automatically debugging and optimizing an in-circuit test that is used to test a device under test on an automated tester is presented. The novel test debug and optimization technique extracts expert knowledge contained in a knowledge framework and automates the formulation of a valid stable, and preferably optimized, test for execution on an integrated circuit tester.