Patents by Inventor Tian H. Lim

Tian H. Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8143174
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Grant
    Filed: January 11, 2008
    Date of Patent: March 27, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Publication number: 20080132087
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Application
    Filed: January 11, 2008
    Publication date: June 5, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Patent number: 7326657
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Grant
    Filed: November 15, 2004
    Date of Patent: February 5, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Patent number: 6899763
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: May 31, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim
  • Patent number: 6858923
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Grant
    Filed: November 12, 2002
    Date of Patent: February 22, 2005
    Assignee: Applied Materials Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Patent number: 6635575
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: October 21, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Patent number: 6602806
    Abstract: A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: August 5, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Fabrice Geiger, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Publication number: 20030077857
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Application
    Filed: November 12, 2002
    Publication date: April 24, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
  • Publication number: 20030066482
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Application
    Filed: November 8, 2002
    Publication date: April 10, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim
  • Patent number: 6528116
    Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: March 4, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Himansu Pokharna, Li-Qun Xia, Tian H. Lim
  • Patent number: 6486061
    Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: November 26, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim