Patents by Inventor Tian Hao HAN

Tian Hao HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for atomic layer etching
    Patent number: 11784029
    Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: October 10, 2023
    Assignee: WONIK IPS CO., LTD.
    Inventors: Kwang Seon Jin, Sang Jun Park, Byung Chul Cho, Jun Hyuck Kwon, Jong Ki An, Tian Hao Han
  • METHOD AND APPARATUS FOR ATOMIC LAYER ETCHING
    Publication number: 20220059325
    Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.
    Type: Application
    Filed: July 2, 2021
    Publication date: February 24, 2022
    Applicant: WONIK IPS CO., LTD.
    Inventors: Kwang Seon JIN, Sang Jun PARK, Byung Chul CHO, Jun Hyuck KWON, Jong Ki AN, Tian Hao HAN