Abstract: The disclosure relates to the field of information processing, and more particularly to a method, electronic device and storage medium for information processing. According to the embodiments of the disclosure, the method of information processing includes: establishing an association relationship between a first application and a first file, the first application being a program for processing a service processing flow; determining service processing flow information of the first application; and displaying first information corresponding to the service processing flow information at a predetermined position in the first file. The method of information processing provided by the embodiments of the disclosure enables users to conveniently obtain service processing flow information related to the first file through the first file, and facilitates subsequent audit and review of the file or the corresponding service processing flow.

Abstract: The disclosure provides a method, apparatus, terminal and storage medium for service processing based on an online document. The method includes: determining a first application; establishing an association between the first application and a first online document; and performing a first processing on the first online document according to the information related to the first application. The information processing method provided by embodiments of the present disclosure can process the first online document based on the information related to the first application, so that the data processing of the first online document can adapt to the service logic of the first application itself. While fully utilizing the characteristics of openness and easy collaboration of the online document, the online document can reflect or adapt to the service logic, and improve the flexibility and stability of the service.

Abstract: The disclosure relates to the field of computers, and particularly to a method, apparatus, electronic device and storage medium for information processing. The method of information processing provided in the present disclosure includes: at a time before the end of a service processing flow about a first file, determining a save strategy for the first file in response to a user operation, so that the first file is saved based on the save strategy after the end of the service processing flow.

Abstract: A method of data processing for an application includes displaying service data in a first display area of a first application display interface; displaying first online document information in a second display area of a first application display interface, the first online document carrying a file required for processing the service data; and processing the service data in response to a first operation initiated based on the content carried by the first online document. The method of data processing for an application displays business data and the first online document in the first display area and the second display area respectively, and operates the business data based on the first operation initiated by the content carried by the first online document, so that the processing method of business data is associated with the content carried by the first online document, thereby improving the flexibility and convenience of business data processing.

Abstract: This disclosure provides a method and apparatus, terminal and storage medium for information processing. The method of information processing includes: receiving a first document for processing a business flow, the business flow comprising one or more business nodes; and when a predetermined operation is performed on a content of the first document, determining an associated person associated with at least one business node of the business flow based on the predetermined operation, and sending a notification message to the associated person.

Abstract: Disclosed is a water level monitoring method based on cluster partition and scale recognition. The water level monitoring method comprises the following steps: 1) obtaining an original image at time t from a real-time monitoring video; 2) intercepting a water gauge area in the original image, and marking an end of the water gauge as a position of the water level; 3) binarizing an image of the water gauge area, and dividing the image of water gauge area processed by a cluster method into several subsections according to three sides of symbol “E”; 4) recognizing a content of each subsections, and obtaining a numerical value in a last subsection containing numbers prior to an area where the water level is located; and 5) calculating and displaying the water level according to the height of the subsections and the numerical value obtained in step 4).

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A semiconductor package structure includes a substrate having a patterned surface, the patterned surface including a first region and a second region, wherein a first line width in the first region is smaller than a second line width in the second region. The semiconductor package structure further includes a first die hybrid-bonded to the first region through conductive features adapted for the first line width, and a second die bonded to the second region through conductive features adapted for the second line width. The manufacturing operations of the semiconductor package structure are also disclosed.

Abstract: A semiconductor package structure includes a substrate having a patterned surface, the patterned surface including a first region and a second region, wherein a first line width in the first region is smaller than a second line width in the second region. The semiconductor package structure further includes a first die hybrid-bonded to the first region through conductive features adapted for the first line width, and a second die bonded to the second region through conductive features adapted for the second line width. The manufacturing operations of the semiconductor package structure are also disclosed.

Abstract: The present application discloses a Bluetooth headset control method, a Bluetooth headset, and a computer readable storage medium. The Bluetooth headset comprises an attraction device, and two sub-headsets, when the Bluetooth headset is in the switch-off state, the two sub-headsets are attracted together through the attraction device. The method includes the following operations: switching on the Bluetooth headset, and connecting the Bluetooth headset with a corresponding target terminal through Bluetooth, when separation of the two sub-headsets is detected; receiving a terminal audio signal sent by the target terminal, and playing audio according to the terminal audio signal, when the connection between the Bluetooth headset and the target terminal is successfully established; executing corresponding headset control operation, when the two sub-headsets are detected to be attracted together through the attraction device.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

Abstract: A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.

Abstract: A semiconductor device having metal gate includes a substrate, a metal gate positioned on the substrate, a high-k gate dielectric layer, and an epitaxial channel layer positioned in between the high-k gate dielectric layer and the substrate. A length of the epitaxial channel layer is larger than a length of the metal gate, and a bottom of the epitaxial channel layer and the substrate are coplanar.

Abstract: A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench. Subsequently, an epitaxial channel layer is formed in the first gate trench.

Abstract: A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the substrate is exposed in a bottom of the first gate trench. Subsequently, an epitaxial channel layer is formed in the first gate trench.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

Abstract: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.