Abstract: Disclosed are a pyrido ring compound, a preparation method therefor, an intermediate, a composition, and an application. The pyrido ring compound has a structure as shown in formula I, has JAK inhibitory activity, and can be used for treating JAK-related diseases, such as autoimmune diseases or cancers.

Abstract: The present invention provides an apparatus to actively balance the thermal performance of paralleled power devices, comprising: a monitoring unit for monitoring the temperature of each power device of the paralleled power devices to judge whether the temperature is out of balance; and a balancing unit for adjusting power loss of the power devices with monitored higher temperatures so as to achieve the balance of the thermal performance of the paralleled power devices.

Abstract: The present invention provides an apparatus to actively balance the thermal performance of paralleled power devices, comprising: a monitoring unit for monitoring the temperature of each power device of the paralleled power devices to judge whether the temperature is out of balance; and a balancing unit for adjusting power loss of the power devices with monitored higher temperatures so as to achieve the balance of the thermal performance of the paralleled power devices.

Abstract: The present disclosure relates to a laminated film and a method for manufacturing the laminated film. The method includes: depositing a first film layer on a substrate; forming a porous force-release contact layer on the first film layer; and forming a second film layer on the force-release contact layer, wherein the first film layer is a metal layer and the second film layer is a semiconductor layer, or the first film layer is a semiconductor layer and the second film layer is a metal layer.

Abstract: A power device having a patterned three-dimensional gate geometry is fabricated and described. The power device achieved increased effective gate width and increased channel conductivity per unit length. It includes at least a channel layer, a barrier layer, a dielectric layer, a gate disposed on the dielectric layer, dielectric layer disposed on the barrier layer and the channel layer, respectively. Gate includes protruding sections and extending sections directly contacting the dielectric layer. Dielectric layer includes a repeating rectangular-wave structure. The dielectric layer forms a gate oxide directly contacting trenches of channel layer. Alternatively, gate oxide can be disposed directly on a p-doped GaN filled region which includes an alternating repeating rectangular-wave structure.