Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: Personal care formulation is provided having multistage polymer, comprising: acrylate rich stage comprising: (a) structural units of monomer selected from C1-22 alkyl (meth)acrylates and structural units of first carbosiloxane monomer of formula (I); and (b) carbosiloxane rich stage, comprising: structural units of second carbosiloxane monomer of formula (I); wherein a is 0 to 3; wherein d is 0 or 1; wherein R1 is selected from hydrogen, C1-10 alkyl group and aryl group; wherein R2 is selected from hydrogen and C1-10 alkyl group; wherein R8 is —O—Si(CH3)3 group; wherein Y is selected from formula (II), (III) and (IV); wherein R4 and R6 are selected from hydrogen and methyl group; wherein R3 and R5 are C1-10 alkylene group; wherein R7 is C1-10 alkyl group; wherein b is 0 to 4 and wherein c is 0 or 1; and wherein the first and second carbosiloxane monomer of formula (I) are same or different.

Abstract: A multistage polymer is provided, having: acrylate rich stage comprising: (a) structural units of monomer selected from C1-22 alkyl (meth)acrylates and structural units of first carbosiloxane monomer of formula (I); and (b) carbosiloxane rich stage, comprising: structural units of second carbosiloxane monomer of formula (I); wherein a is 0 to 3; wherein d is 0 or 1; wherein R1 is selected from hydrogen, C1-10 alkyl group and aryl group; wherein R2 is selected from hydrogen and C1-10 alkyl group; wherein R8 is —O—Si(CH3)3 group; wherein Y is selected from formula (II), (III) and (IV); wherein R4 and R6 are selected from hydrogen and methyl group; wherein R3 and R5 are a C1-10 alkylene group; wherein R7 is C1-10 alkyl group; wherein b is 0 to 4 and wherein c is 0 or 1; and wherein the first and second carbosiloxane monomer of formula (I) are same or different.

Abstract: Embodiments of the present disclosure relate to multimedia processing method, apparatus, device and medium, wherein the method includes: presenting a first multimedia interface comprising first content; receiving an interface switching request of a user in the first multimedia interface; and switching from the first multimedia interface currently presented to a second multimedia interface, and presenting second content in the second multimedia interface, wherein the first content comprises the second content and other content associated with the second content, and the second content comprises a target audio and a target subtitle corresponding to the target audio.

Abstract: The present invention generally relates to systems and methods for imaging or determining nucleic acids or other desired targets, for instance, within cells or tissues. In one aspect, a sample is exposed to a plurality of nucleic acid probes that are determined within the sample. In some cases, however, background fluorescence or off-target binding may make it more difficult to determine properly bound nucleic acid probes. Accordingly, other components of the samples that may be contributing to the background, such as proteins, lipids, and/or other non-targets, may be “cleared” from the sample to improve determination. However, in certain embodiments, nucleic acids or other desired targets may be prevented from also being cleared, e.g., using polymers or gels within the sample. Other aspects are generally directed to compositions or kits involving such systems, methods of using such systems, or the like.

Abstract: A sound processing component applied to a string instrument for providing multiple playing forms and a MIDI function. An acquisition module acquires vibration information of multiple strings and outputs analog signals, and a first amplification and filter module amplifies the analog signals and filters the analog signals. A first conversion module converts the analog signals into digital signals, and a processing module identifies playing information of the digital signals, converts the digital signals to MIDI data based on the playing information, converts the MIDI data to audio data, and add audio effects for the audio data. A second conversion module converts the audio data with the audio effects into analog audio signals, and a second amplification and filter module amplifies the analog audio signals, filters the analog audio signals, and transmit the filtered analog audio signals to a loudspeaker. The string instrument is also provided.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: The present disclosure includes a recording device including a pickup unit, a microphone, and a pickup assembly. The pickup assembly includes a filter circuit unit, a codec, and an audio processing circuit unit. The pickup assembly is used to mix sounds of the musical instrument picked up by the pickup unit and human voices picked up by the microphone. The present disclosure also provides a musical instrument recording method, including the following: picking up the sounds of the musical instrument; picking up the human voices; and processing the sound recorded, in order to solve the problem of cumbersome connection and poor results during recording and live broadcasting of musical instruments.

Abstract: A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

Abstract: A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

Abstract: A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

Abstract: A first microchip includes holes or sockets along or in a top face or surface of the first microchip and a second microchip includes nodules extending from a edge of the second microchip. The nodules of the second microchip are received in the holes or sockets along or in the top face or surface of the first microchip, whereupon the first and second microchips are positioned transverse or perpendicular to each other.