Patents by Inventor Tian MIAO

Tian MIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11988572
    Abstract: A device for measuring length and center of mass of conical workpiece, including an inner frame, an outer frame, a base plate, two laser displacement sensors and a plurality of weighing mechanisms. The inner frame is rotatably connected with the outer frame through a pin shaft. A bottom surface of the conical workpiece can be fixedly connected with an inner bottom surface of the inner frame. The base plate is removably arranged on the inner frame, and abuts against a top of the conical workpiece. The base plate is perpendicular to an axis of the conical workpiece. The laser displacement sensors are fixedly arranged at a position of the inner frame below the top of the conical workpiece. The weighing mechanisms are provided at a bottom of the outer frame, and can bear the inner frame, the outer frame and the conical workpiece.
    Type: Grant
    Filed: January 12, 2024
    Date of Patent: May 21, 2024
    Assignee: BEIJING AEROSPACE INSTITUTE FOR METROLOGY AND MEASUREMENT TECHNOLOGY
    Inventors: Yinxiao Miao, Fengju Sun, Qigang Huang, Lei Yan, Tian Bai, Xiaosan Wang, Ruidong Huo, Bingtao Gao, Yimeng Guo
  • Publication number: 20240151605
    Abstract: A device for measuring length and center of mass of conical workpiece, including an inner frame, an outer frame, a base plate, two laser displacement sensors and a plurality of weighing mechanisms. The inner frame is rotatably connected with the outer frame through a pin shaft. A bottom surface of the conical workpiece can be fixedly connected with an inner bottom surface of the inner frame. The base plate is removably arranged on the inner frame, and abuts against a top of the conical workpiece. The base plate is perpendicular to an axis of the conical workpiece. The laser displacement sensors are fixedly arranged at a position of the inner frame below the top of the conical workpiece. The weighing mechanisms are provided at a bottom of the outer frame, and can bear the inner frame, the outer frame and the conical workpiece.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Inventors: Yinxiao MIAO, Fengju SUN, Qigang HUANG, Lei YAN, Tian BAI, Xiaosan WANG, Ruidong HUO, Bingtao GAO, Yimeng GUO
  • Publication number: 20240151514
    Abstract: A conical workpiece length measurement method is provided. Two laser displacement sensors are symmetrically arranged at opposite sides of a to-be-measured conical workpiece or a tooling loaded with the to-be-measured conical workpiece. Distance X0 from each displacement sensor to a bottom plane of the to-be-measured conical workpiece is calibrated. An elongated base plate is arranged at a tip of the to-be-measured conical workpiece, and the two displacement sensors measure their respective distances to the base plate. The total length of the to-be-measured conical workpiece is calculated as follows: X=X0+(X1+X2)/2, where X1 represents distance from one of the two displacement sensors to the base plate, and X2 represents distance from the other of the two displacement sensors to the base plate. Factors influencing the length measurement include calibration of the fixed length, measurement accuracy of the displacement sensor and a tilt error of the base plate.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Inventors: Yinxiao MIAO, Xiaosan WANG, Fengju SUN, Lei YAN, Tian BAI, Qigang HUANG, Ruidong HUO, Yilin DAI, Junhong TIAN
  • Publication number: 20230223408
    Abstract: Provided are a CMOS structure, and fabrication methods of a FinFET CMOS, an FD CMOS and a GAA CMOS. The CMOS structure includes an nMOS and a pMOS, The nMOS includes a first channel region and a first gate electrode formed on a semiconductor substrate, and the pMOS includes a second channel region and a second gate electrode formed on the semiconductor substrate, where the first channel region and the second channel region are formed of semiconductor materials with the same conductivity type, and the first gate electrode and the second gate electrode are formed of the conductive materials with the same work function. This CMOS structure reduces the processing steps for fabricating the CMOS, thereby reducing the process complexity and the production cost, which is beneficial for improving the performance and reliability of CMOS and its integrated circuits.
    Type: Application
    Filed: March 17, 2023
    Publication date: July 13, 2023
    Inventors: Huiyong HU, Liming WANG, Bin SHU, Bin WANG, Ningning ZHANG, Tian MIAO, Jian ZHANG, Lingyao MENG, Maolong YANG, Xinlong SHI, Heming ZHANG