Patents by Inventor Tian See Hoe

Tian See Hoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molded semiconductor module having a mold step for increasing creepage distance
    Patent number: 11621204
    Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: April 4, 2023
    Assignee: Infineon Technologies AG
    Inventors: Oliver Markus Kreiter, Ludwig Busch, Angel Enverga, Mei Fen Hiew, Tian See Hoe, Elvis Keli, Kean Ming Koe, Sanjay Kumar Murugan, Michael Niendorf, Ivan Nikitin, Bernhard Stiller, Thomas Stoek, Ke Yan Tean
  • MOLDED SEMICONDUCTOR MODULE HAVING A MOLD STEP FOR INCREASING CREEPAGE DISTANCE
    Publication number: 20220262693
    Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.
    Type: Application
    Filed: February 17, 2021
    Publication date: August 18, 2022
    Inventors: Oliver Markus Kreiter, Ludwig Busch, Angel Enverga, Mei Fen Hiew, Tian See Hoe, Elvis Keli, Kean Ming Koe, Sanjay Kumar Murugan, Michael Niendorf, Ivan Nikitin, Bernhard Stiller, Thomas Stoek, Ke Yan Tean