Patents by Inventor Tianbin Zhong

Tianbin Zhong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench MOSFET Structure and Method of Making the Same
    Publication number: 20130214349
    Abstract: A trench MOSFET sidewall structure includes a heavily doped substrate, a lightly doped epitaxial layer, a lightly doped well and a heavily doped source adjacent to one another to form a semiconductor substrate. Multiple trenches as well as multiple contact holes are defined in the substrate and each contact hole respectively is defined between two adjacent trenches. A top portion of the contact hole has a size larger than that of a bottom portion of the contact hole.
    Type: Application
    Filed: October 29, 2010
    Publication date: August 22, 2013
    Inventors: Jianping Gu, Gang Ji, Kaibin Ni, Tianbin Zhong