Patents by Inventor Tianbing Zhong

Tianbing Zhong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench MOSFET with trench contact holes and method for fabricating the same
    Patent number: 8697518
    Abstract: A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: April 15, 2014
    Assignee: Will Semiconductor Ltd.
    Inventors: Gang Ji, Jianping Gu, Kaibin Ni, Tianbing Zhong
  • TRENCH MOSFET WITH TRENCH CONTACT HOLES AND METHOD FOR FABRICATING THE SAME
    Publication number: 20120091523
    Abstract: A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.
    Type: Application
    Filed: June 4, 2010
    Publication date: April 19, 2012
    Applicant: WILL SEMICONDUCTOR LTD.
    Inventors: Gang Ji, Jianping Gu, Kaibin Ni, Tianbing Zhong