Abstract: Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (9), an optical fiber sleeve (10), an imaging lens group (11), and a reference lens (12), wherein: the first N+1-core multimode optical fiber probe (9), the imaging lens group (11), and the reference lens (12) are sequentially fixed inside the optical fiber sleeve (10) along a direction of the F-P sensor probe toward a sample (8); and the first N+1-core multimode optical fiber probe (9) includes N first multimode optical fibers (16) and one second multimode optical fiber (17), where N?2, and the N first multimode optical fibers (16) are arranged around the second multimode optical fiber (17).

Abstract: Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (9), an optical fiber sleeve (10), an imaging lens group (11), and a reference lens (12), wherein: the first N+1-core multimode optical fiber probe (9), the imaging lens group (11), and the reference lens (12) are sequentially fixed inside the optical fiber sleeve (10) along a direction of the F-P sensor probe toward a sample (8); and the first N+1-core multimode optical fiber probe (9) includes N first multimode optical fibers (16) and one second multimode optical fiber (17), where N?2, and the N first multimode optical fibers (16) are arranged around the second multimode optical fiber (17).

Abstract: A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk substrate; a source and a drain on the bulk substrate, a channel region extending between the source and the drain, and a ferroelectric layer and a gate stacked on the channel region; and the writing method includes: applying a first voltage between the gate of at least one memory cell and the bulk of at least one memory cell, in which the first voltage is less than a reversal voltage at which the ferroelectric layer is polarization reversed, and each of the source and the drain is grounded or in a floating state.

Abstract: The present disclosure provides a fusion memory including a plurality of memory cells, wherein each memory cell of the plurality of memory cells includes: a bulk substrate; a source and a drain on the bulk substrate; a channel extending between the source and the drain; a ferroelectric layer on the channel; and a gate on the ferroelectric layer.

Abstract: Disclosed is a memory, including a plurality of memory units, wherein each memory unit includes: a bulk substrate; a source electrode, a drain electrode and a channel region extending between a source region and a drain region that are located on the bulk substrate; a deep-level defect dielectric layer on the channel region; and a gate electrode on the deep-level defect dielectric layer. The memory of the present disclosure allows the memory unit to operate in the charge trapping mode and the polarization inversion mode. Therefore, the memory has functions of both DRAM and NAND, and combines the advantages of the two.

Abstract: A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk substrate; a source and a drain on the bulk substrate, a channel region extending between the source and the drain, and a ferroelectric layer and a gate stacked on the channel region; and the writing method includes: applying a first voltage between the gate of at least one memory cell and the bulk of at least one memory cell, in which the first voltage is less than a reversal voltage at which the ferroelectric layer is polarization reversed, and each of the source and the drain is grounded or in a floating state.

Abstract: The present disclosure provides a fusion memory including a plurality of memory cells, wherein each memory cell of the plurality of memory cells includes: a bulk substrate; a source and a drain on the bulk substrate; a channel extending between the source and the drain; a ferroelectric layer on the channel; and a gate on the ferroelectric layer.