Abstract: The present application discloses an optoelectronic device, including an anode, a hole transport layer disposed on the anode, a quantum dot light-emitting layer disposed on the hole transport layer, and a cathode disposed on the quantum dot light-emitting layer; the quantum dot light-emitting layer includes a quantum dot material in a core-shell structure, and a difference between a top energy level of a valence band of an outer shell layer material of the quantum dot material and that of a hole transport material in the hole transport layer is greater than or equal to 0.5 eV.

Abstract: A photoelectric device, which includes an anode, a hole transport layer, a quantum dot light-emitting layer and a cathode arranged in sequence, the hole transport layer contains at least two hole transport materials, and the at least two hole transport materials includes a hole transport layer with an absolute value of a maximum energy level of valence band of the transport material being smaller than or equal to 5.3 eV, and a hole transport layer with an absolute value of a maximum energy level of valence band being greater than 5.3 eV.

Abstract: The present application discloses a method for preparing a light-emitting device, including a following step: preparing a laminated composite structure of a quantum dot light-emitting layer and an electron transport layer between an anode and a cathode; the electron transport layer comprises a metal oxide transport material; and the laminated composite structure is irradiated by an ultraviolet light. In the method for preparing a light-emitting device, due that the light-emitting device includes the laminated composite structure of the quantum dot light-emitting layer and the electron transport layer, the electrons of oxygen in the metal oxide transport material in the electron transport layer are excited to form complexes with active metal elements such as a zinc in the quantum dot light-emitting layer, the internal physical structure defects and surface roughness of the electron transport layer are reduced.

Abstract: Implants include a single tapped coil antenna having a first section and a second section for wireless power transfer, data downlink and data uplink. A modulated wireless power transfer signal is received by the tapped coil antenna and used to provide electrical power. The modulation is detected to generate downlink data. A switch is used to charge a section of the tapped coil antenna by establish a current which is then be interrupted by opening the switch. The switching produces a high-amplitude pulsed magnetic field (PMF) for use in data uplink over a large distance between the implant and an external transceiver.

Abstract: A photoelectric device, which includes an anode, a first hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and a cathode arranged in sequence, and an absolute value of a difference between a maximum energy level of valence band of a hole transport material in the hole transport layer and a work function of a first hole injection material in the first hole injection layer is smaller than or equal to 0.2 eV.