Patents by Inventor Tianfu Ma

Tianfu Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
    Patent number: 6900082
    Abstract: The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: May 31, 2005
    Assignee: Man Wong, The Hong Kong University of Science & Technology
    Inventors: Man Wong, Tianfu Ma, Zhiguo Meng
  • Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
    Publication number: 20040166655
    Abstract: The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.
    Type: Application
    Filed: February 24, 2003
    Publication date: August 26, 2004
    Inventors: Man Wong, Tianfu Ma, Zhiguo Meng