Patents by Inventor Tianji ZHOU
Tianji ZHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11944013Abstract: A second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, and a magnetic tunnel junction (MTJ) stack aligned above the via. A first back end of line (BEOL) layer including a BEOL dielectric layer surrounding a BEOL metal layer, a second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, a magnetic tunnel junction (MTJ) stack aligned above the via. Forming a via dielectric layer as a second back end of line (BEOL) layer, an opening, a lower metal stud in the opening, a liner on the lower metal stud and on exposed side surfaces of the opening, an upper metal stud in remaining portions of the opening, and forming a magnetic tunnel junction (MTJ) stack aligned above.Type: GrantFiled: September 17, 2021Date of Patent: March 26, 2024Assignee: International Business Machines CorporationInventors: Heng Wu, Dimitri Houssameddine, Huai Huang, Tianji Zhou
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Patent number: 11876047Abstract: A semiconductor component includes an insulative layer having a lowermost surface arranged on top of a bottom dielectric material. The semiconductor component further includes a first interconnect structure arranged in the bottom dielectric material such that an uppermost surface of the first interconnect structure is arranged at a first height relative to the lowermost surface of the insulative layer. The semiconductor component further includes a pillar connected to the first interconnect structure and extending through the insulative layer. The semiconductor component further includes a second interconnect structure arranged in the bottom dielectric material such that an uppermost surface of the second interconnect structure is arranged at a second height relative to the lowermost surface of the insulative layer. The second height is different than the first height.Type: GrantFiled: September 14, 2021Date of Patent: January 16, 2024Assignee: International Business Machines CorporationInventors: Saumya Sharma, Ashim Dutta, Tianji Zhou, Chih-Chao Yang
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Publication number: 20230197506Abstract: Embodiments of the present invention are directed to subtractive processing methods and resulting structures for semiconductor devices having decoupled interconnects. In a non-limiting embodiment of the invention, a first conductive line is formed in a dielectric layer. A conductive pillar is formed over the first conductive line and a liner is formed in a trench adjacent to the first conductive line. A portion of the liner extends over the conductive pillar. A lower metal line and a top via are subtractively formed on the liner in the trench.Type: ApplicationFiled: December 16, 2021Publication date: June 22, 2023Inventors: Saumya Sharma, Chih-Chao Yang, Tianji Zhou, Ashim Dutta
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Publication number: 20230189660Abstract: An MRAM device is provided. The MRAM device includes a semiconductor device comprising a bottom contact electrode (BEC), and an MRAM stack formed on the BEC. A width of an upper portion of the BEC is less than a width of the MRAM stack.Type: ApplicationFiled: December 9, 2021Publication date: June 15, 2023Inventors: ASHIM DUTTA, SAUMYA SHARMA, TIANJI ZHOU, CHIH-CHAO YANG
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Patent number: 11621294Abstract: A technique relates to an integrated circuit (IC). Pillars of a set of memory elements are formed. A bilayer dielectric is formed between the pillars, the bilayer dielectric having an upper dielectric material formed on a lower dielectric material without requiring an etch of the lower dielectric material prior to forming the upper dielectric material, thereby preventing a void in the bilayer dielectric, the lower dielectric material including one or more flowable dielectric materials.Type: GrantFiled: May 29, 2020Date of Patent: April 4, 2023Assignee: International Business Machines CorporationInventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Publication number: 20230091345Abstract: A second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, and a magnetic tunnel junction (MTJ) stack aligned above the via. A first back end of line (BEOL) layer including a BEOL dielectric layer surrounding a BEOL metal layer, a second BEOL layer including a via dielectric layer surrounding a via including an upper metal stud and a lower metal stud separated by a liner, a magnetic tunnel junction (MTJ) stack aligned above the via. Forming a via dielectric layer as a second back end of line (BEOL) layer, an opening, a lower metal stud in the opening, a liner on the lower metal stud and on exposed side surfaces of the opening, an upper metal stud in remaining portions of the opening, and forming a magnetic tunnel junction (MTJ) stack aligned above.Type: ApplicationFiled: September 17, 2021Publication date: March 23, 2023Inventors: Heng Wu, Dimitri Houssameddine, Huai Huang, Tianji Zhou
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Publication number: 20230081953Abstract: A semiconductor component includes an insulative layer having a lowermost surface arranged on top of a bottom dielectric material. The semiconductor component further includes a first interconnect structure arranged in the bottom dielectric material such that an uppermost surface of the first interconnect structure is arranged at a first height relative to the lowermost surface of the insulative layer. The semiconductor component further includes a pillar connected to the first interconnect structure and extending through the insulative layer. The semiconductor component further includes a second interconnect structure arranged in the bottom dielectric material such that an uppermost surface of the second interconnect structure is arranged at a second height relative to the lowermost surface of the insulative layer. The second height is different than the first height.Type: ApplicationFiled: September 14, 2021Publication date: March 16, 2023Inventors: Saumya Sharma, Ashim Dutta, Tianji Zhou, Chih-Chao Yang
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Patent number: 11361987Abstract: A method for making a semiconductor apparatus includes forming a first bottom interconnect in a device area of a first dielectric layer; fabricating a device on top of the first bottom interconnect; capping the device with a first interlayer dielectric; exposing a logic area of the first dielectric layer that is adjacent to the device area by removing a portion of the first interlayer dielectric from the first dielectric layer while leaving another portion of the first interlayer dielectric that caps the device; and forming a second bottom interconnect in the logic area of the first dielectric layer. By forming the second bottom interconnect after the device fabrication and capping, damage to the device and to the second bottom interconnect is avoided.Type: GrantFiled: May 14, 2020Date of Patent: June 14, 2022Assignee: International Business Machines CorporationInventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Patent number: 11251368Abstract: A method includes forming a first metallization layer containing a first metal-containing line and a second metal-containing line disposed in a first interlevel dielectric layer. The first metal-containing line includes a first conductive metal and the second metal-containing line includes a second conductive metal. The first metal-containing line and the second metal-containing line are recessed to below a top surface of the interlevel dielectric layer. A metal-containing cap protection layer is deposited in a recessed portion of the first metal-containing line and the second metal-containing line. The metal-containing cap protection layer includes a third conductive metal which is different than the first conductive metal and the second conductive metal.Type: GrantFiled: April 20, 2020Date of Patent: February 15, 2022Assignee: International Business Machines CorporationInventors: Tianji Zhou, Saumya Sharma, Ashim Dutta, Chih-Chao Yang
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Patent number: 11244907Abstract: Methods and structures for improving alignment contrast for patterning a metal layer generally includes depositing a metal layer having a plurality of grains, wherein grain boundaries between the grains forms grooves at a surface of the metal layer. The metal layer is subjected to surface treatment to form an oxide or a nitride layer and fill the surface grooves. The metal layer can be patterned using alignment marks in the metal layer and/or underlying layers. Filling the grooves with the oxide or nitride increases alignment contrast relative to patterning the metal layer without the surface treating.Type: GrantFiled: January 2, 2020Date of Patent: February 8, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tianji Zhou, Saumya Sharma, Dominik Metzler, Chih-Chao Yang, Theodorus E. Standaert
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Patent number: 11239160Abstract: E-fuses and techniques for fabrication thereof using dielectric zipping are provided. An e-fuse device includes: a first dielectric layer disposed on a substrate; at least one first electrode of the e-fuse device present in the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; vias present in the second dielectric layer, wherein at least one of the vias is present over the at least one first electrode and has a critical dimension CDA?, wherein the vias adjacent to the at least one via having the critical dimension CDA? each have a critical dimension of CDB?, and wherein CDB?>CDA?; a liner disposed in each of the vias; and a metal that serves as a second electrode of the e-fuse device disposed in each of the vias over the liner. A method of operating an e-fuse device is also provided.Type: GrantFiled: June 16, 2020Date of Patent: February 1, 2022Assignee: International Business Machines CorporationInventors: Tianji Zhou, Saumya Sharma, Ashim Dutta, Chih-Chao Yang
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Patent number: 11227997Abstract: Embodiments of the present invention are directed to forming a planar Resistive Random Access Memory (RRAM) device with a shared top electrode. In a non-limiting embodiment of the invention, a first trench having a first width and a second trench having a second width less than the first width are formed in a dielectric layer. A bottom liner is formed on sidewalls of the first trench. The bottom liner pinches off the second trench. A top liner is formed on sidewalls of the bottom liner in the first trench. The top liner is formed such that a portion of the bottom liner at a bottommost region of the first trench remains exposed. The exposed portion of the bottom liner is removed, and a memory cell material is formed in the first trench.Type: GrantFiled: July 7, 2020Date of Patent: January 18, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Publication number: 20220013723Abstract: Embodiments of the present invention are directed to forming a planar Resistive Random Access Memory (RRAM) device with a shared top electrode. In a non-limiting embodiment of the invention, a first trench having a first width and a second trench having a second width less than the first width are formed in a dielectric layer. A bottom liner is formed on sidewalls of the first trench. The bottom liner pinches off the second trench. A top liner is formed on sidewalls of the bottom liner in the first trench. The top liner is formed such that a portion of the bottom liner at a bottommost region of the first trench remains exposed. The exposed portion of the bottom liner is removed, and a memory cell material is formed in the first trench.Type: ApplicationFiled: July 7, 2020Publication date: January 13, 2022Inventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Publication number: 20210391256Abstract: E-fuses and techniques for fabrication thereof using dielectric zipping are provided. An e-fuse device includes: a first dielectric layer disposed on a substrate; at least one first electrode of the e-fuse device present in the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; vias present in the second dielectric layer, wherein at least one of the vias is present over the at least one first electrode and has a critical dimension CDA?, wherein the vias adjacent to the at least one via having the critical dimension CDA? each have a critical dimension of CDB?, and wherein CDB?>CDA?; a liner disposed in each of the vias; and a metal that serves as a second electrode of the e-fuse device disposed in each of the vias over the liner. A method of operating an e-fuse device is also provided.Type: ApplicationFiled: June 16, 2020Publication date: December 16, 2021Inventors: Tianji Zhou, Saumya Sharma, Ashim DUTTA, Chih-Chao Yang
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Publication number: 20210375986Abstract: A technique relates to an integrated circuit (IC). Pillars of a set of memory elements are formed. A bilayer dielectric is formed between the pillars, the bilayer dielectric having an upper dielectric material formed on a lower dielectric material without requiring an etch of the lower dielectric material prior to forming the upper dielectric material, thereby preventing a void in the bilayer dielectric, the lower dielectric material including one or more flowable dielectric materials.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Publication number: 20210358801Abstract: A method for making a semiconductor apparatus includes forming a first bottom interconnect in a device area of a first dielectric layer; fabricating a device on top of the first bottom interconnect; capping the device with a first interlayer dielectric; exposing a logic area of the first dielectric layer that is adjacent to the device area by removing a portion of the first interlayer dielectric from the first dielectric layer while leaving another portion of the first interlayer dielectric that caps the device; and forming a second bottom interconnect in the logic area of the first dielectric layer. By forming the second bottom interconnect after the device fabrication and capping, damage to the device and to the second bottom interconnect is avoided.Type: ApplicationFiled: May 14, 2020Publication date: November 18, 2021Inventors: Ashim Dutta, Saumya Sharma, Tianji Zhou, Chih-Chao Yang
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Patent number: 11177213Abstract: An anti-fuse device having enhanced programming efficiency is provided. The anti-fuse device includes via contact structures that have different critical dimensions located between a first electrode and a second electrode. Notably, a first via contact structure having a first critical dimension is provided between a pair of second via contact structures having a second critical dimension that is greater than the first critical dimension. When a voltage is applied to the device, dielectric breakdown will occur first through the first via contact structure having the first critical dimension.Type: GrantFiled: January 28, 2020Date of Patent: November 16, 2021Assignee: International Business Machines CorporationInventors: Chih-Chao Yang, Baozhen Li, Tianji Zhou, Ashim Dutta, Saumya Sharma
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Publication number: 20210328137Abstract: A method includes forming a first metallization layer containing a first metal-containing line and a second metal-containing line disposed in a first interlevel dielectric layer. The first metal-containing line includes a first conductive metal and the second metal-containing line includes a second conductive metal. The first metal-containing line and the second metal-containing line are recessed to below a top surface of the interlevel dielectric layer. A metal-containing cap protection layer is deposited in a recessed portion of the first metal-containing line and the second metal-containing line. The metal-containing cap protection layer includes a third conductive metal which is different than the first conductive metal and the second conductive metal.Type: ApplicationFiled: April 20, 2020Publication date: October 21, 2021Inventors: Tianji Zhou, Saumya Sharma, Ashim Dutta, Chih-Chao Yang
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Publication number: 20210233843Abstract: An anti-fuse device having enhanced programming efficiency is provided. The anti-fuse device includes via contact structures that have different critical dimensions located between a first electrode and a second electrode. Notably, a first via contact structure having a first critical dimension is provided between a pair of second via contact structures having a second critical dimension that is greater than the first critical dimension. When a voltage is applied to the device, dielectric breakdown will occur first through the first via contact structure having the first critical dimension.Type: ApplicationFiled: January 28, 2020Publication date: July 29, 2021Inventors: Chih-Chao Yang, Baozhen Li, Tianji Zhou, Ashim Dutta, Saumya Sharma
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Publication number: 20210210434Abstract: Methods and structures for improving alignment contrast for patterning a metal layer generally includes depositing a metal layer having a plurality of grains, wherein grain boundaries between the grains forms grooves at a surface of the metal layer. The metal layer is subjected to surface treatment to form an oxide or a nitride layer and fill the surface grooves. The metal layer can be patterned using alignment marks in the metal layer and/or underlying layers. Filling the grooves with the oxide or nitride increases alignment contrast relative to patterning the metal layer without the surface treating.Type: ApplicationFiled: January 2, 2020Publication date: July 8, 2021Inventors: Tianji Zhou, Saumya Sharma, Dominik METZLER, Chih-Chao Yang, Theodorus E. Standaert