Abstract: A method for forming a semiconductor structure includes: providing a substrate, and forming a dielectric layer and a mask layer, where the mask layer is arranged with a first opening; forming a first barrier layer on a sidewall of the first opening, where the first barrier layer surrounds and forms a second opening; forming a second barrier layer filling the second opening; removing the first barrier layer and the second barrier layer by a first etching process until the first barrier layer or the second barrier layer is completely removed; and removing the dielectric layer exposed by the first opening and part of the substrate exposed by the first opening to form a bit-line contact opening.

Abstract: A method for preparing a semiconductor device is provided. The method for preparing the semiconductor device includes: providing a substrate, and forming a first dielectric layer on one side of the substrate, where the substrate includes an array area and a peripheral area arranged outside of the array area; forming an initial mask pattern on one side of the first dielectric layer away from the substrate; performing at least two patterning processes on the initial mask pattern, to form a first mask pattern in the array area and to form a second mask pattern in the peripheral area. The first mask pattern has a first height, the second mask pattern has a second height, and the second height is greater than the first height. Both of the array area and the peripheral area are exposed by using each of the at least two patterning processes.