Abstract: A packaging method and a packaging structure are provided. The packaging method includes providing a cap wafer including a groove; forming a sacrificial layer in the groove and a first device on the sacrificial layer; providing a substrate wafer and a second device formed on the substrate wafer; bonding a surface of the cap wafer having the first device formed thereon with a surface of the substrate wafer having the second device formed thereon, to form an electrical connection between the first device and the second device; and removing the sacrificial layer from a side of the cap wafer away from the substrate wafer, to form a cavity. The first device is located in the cavity.

Abstract: A packaging method and a packaging structure are provided. The packaging method includes providing a cap wafer including a groove; forming a sacrificial layer in the groove and a first device on the sacrificial layer; providing a substrate wafer and a second device formed on the substrate wafer; bonding a surface of the cap wafer having the first device formed thereon with a surface of the substrate wafer having the second device formed thereon, to form an electrical connection between the first device and the second device; and removing the sacrificial layer from a side of the cap wafer away from the substrate wafer, to form a cavity. The first device is located in the cavity.

Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

Abstract: Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.