Patents by Inventor Tianniu Rick Chen

Tianniu Rick Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10954480
    Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: March 23, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Tianniu Rick Chen
  • Publication number: 20190119610
    Abstract: Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.
    Type: Application
    Filed: September 25, 2018
    Publication date: April 25, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Jhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Tianniu Rick Chen
  • Patent number: 9873833
    Abstract: Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: January 23, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Gene Everad Parris, William Jack Casteel, Jr., Tianniu Rick Chen
  • Publication number: 20160186058
    Abstract: Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.
    Type: Application
    Filed: December 22, 2015
    Publication date: June 30, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Gene Everad Parris, William Jack Casteel, JR., Tianniu Rick Chen