Abstract: The present invention provides a color filter substrate, a display device and a detection method thereof, aims to solve the problems of difficulty in failure positioning and low detection efficiency in existing display panels. The color filter substrate comprises a plurality of sub-pixels arranged in an array, each of the sub-pixels is provided with a color filter, and at least a part of columns of sub-pixels are marked column of sub-pixels. The shapes of the color filters of a part of sub-pixels of the marked column of sub-pixels are different from those of the remaining sub-pixels. The display device comprises the above-mentioned color filter substrate. The color filter substrate can be used in the display device, particularly suitable for the display device which adopts double side GOA circuits.

Abstract: The present invention discloses an array substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology, in order to reduce the leakage current of the TFT, improve the stability of the TFT, and enhance the display effect of the display device. The array substrate comprises: a transparent substrate, a TFT on the transparent substrate, a first passivation layer covering the TFT, a first transparent electrode on a surface of the first passivation layer, and a light blocking structure for preventing light transmission provided at a position, corresponding to a channel of the TFT, on a side of the TFT away from the transparent substrate.

Abstract: A manufacture method of a via hole for a display panel, a manufacture method of a display panel, and a display panel are provided. During forming the via hole, a top film layer in an area to be formed with a via hole over a circuit pattern is etched under a first etching condition according to a slope angle as required; and a remaining portion in the area to be formed with a via hole is etched under a second etching condition according to a selection ratio as required, so as to form the via hole finally. A problem in one-step etching process that the slope angle and the selection ratio cannot be set flexibly is avoided.

Abstract: A stable pharmaceutical formulation is provided that comprises a biologically active protein and an excipient selected from carnitine, creatine or creatinine.

Abstract: The present invention discloses an array substrate, a fabricating method of thereof and a display device. The array substrate comprises a base substrate, and a pattern of a gate, a pattern of a gate insulating layer, a pattern of a pixel electrode, a pattern of an ohmic contact layer, a pattern of an active layer, and a pattern of source-drain electrodes formed on the base substrate. The pattern of the pixel electrode is positioned between the pattern of the gate insulating layer and the pattern of the ohmic contact layer. The technical solutions of the present disclosure can reduce one mask process, thus lowering fabrication cost and improving product yield.

Abstract: A pixel array structure and manufacturing method thereof, an array substrate and a display device are provided. The manufacturing method of the pixel array structure includes: forming a doped active layer over an active layer, the doped active layer having a portion with a larger thickness and a portion with a smaller thickness; forming a source/drain metal layer on the doped active layer and the active layer; conducting an etching process on the source/drain metal layer, so as to form a source electrode and a drain electrode, one of which partially covers the portion of the doped active layer with a larger thickness; conducting an etching process on the doped active layer and the active layer in a region between the source electrode and the drain electrode, so as to forming an optimized channel. With the manufacturing method, the on-state current of a channel of a thin film transistor can be raised.

Abstract: A method for manufacturing an array substrate which includes: depositing a gate metal film on a base substrate, and forming a first pattern including the gate electrode by a first patterning process; depositing a gate insulating film, a first transparent conductive film, a source/drain metal film and a doped a-Si film sequentially, and forming a second pattern including the pixel electrode, the source electrode, the drain electrode and a doped semiconductor layer by a second patterning process; depositing an a-Si film, and forming a third pattern including a TFT channel, the semiconductor layer and a gate insulating layer via-hole by a third patterning process; depositing a passivation layer film, and forming a fourth pattern including a passivation layer via-hole by a fourth patterning process, the passivation layer via-hole being arranged at a position corresponding to the gate insulating layer via-hole; and depositing a second transparent conductive film on the base substrate with the fourth pattern, and f

Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Abstract: A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.

Abstract: An array substrate, comprising a display region and a GOA region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate.

Abstract: A method for manufacturing a thin film transistor according to the present disclosure may include the following steps of: performing a two-step etching on an active layer such that part of the active layer is consistent with a source-drain electrode layer, and etching the active layer within a photoresist-removed-area to form an active layer tail; ashing a photoresist layer such that a contour of the photoresist layer is consistent with that of the source-drain electrode layer; further etching the source-drain electrode layer to form a source-drain electrode layer pattern including a source electrode and a drain electrode, and etching off a doped semiconductor layer between the source electrode and the drain electrode, and meanwhile etching off the active layer tail.

Abstract: A method for fabricating a sensor, comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode, a pattern of a photodiode, a pattern of a receive electrode, a pattern of a source electrode, a pattern of a drain electrode, a pattern of a data line and a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer, a pattern of a first passivation layer, a pattern of a gate electrode and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.

Abstract: An array substrate and a fabrication method thereof and a display device are provided. The fabrication method comprises: preparing a base substrate, the base substrate including a pixel region and a gate on array region; forming a pattern including a gate electrode and a pattern of an active layer on the base substrate, and forming a gate lead on the gate on array region, by a first patterning process; forming a pattern of a gate insulating layer by a second patterning process; forming a pattern including a source/drain electrode by a third patterning process; forming a pattern of a planarization layer by a fourth patterning layer; and forming a pattern including a pixel electrode by a fifth patterning layer.

Abstract: The present invention discloses an array substrate, a fabricating method of thereof and a display device. The array substrate comprises a base substrate, and a pattern of a gate, a pattern of a gate insulating layer, a pattern of a pixel electrode, a pattern of an ohmic contact layer, a pattern of an active layer, and a pattern of source-drain electrodes formed on the base substrate. The pattern of the pixel electrode is positioned between the pattern of the gate insulating layer and the pattern of the ohmic contact layer. The technical solutions of the present disclosure can reduce one mask process, thus lowering fabrication cost and improving product yield.

Abstract: The present disclosure provides a half tone mask plate used to manufacture an active layer pattern as well as a source electrode pattern, a drain electrode pattern and a data line pattern located on the active layer pattern included in the array substrate. A surface of the array substrate includes a first region corresponding to the source electrode pattern, the drain electrode pattern and the data line pattern, a second region corresponding to a region of the active layer pattern located between the source electrode pattern and the drain electrode pattern, as well as a third region in addition to the first region and the second region; the half tone mask plate includes a semi-transparent region corresponding to the second region and a partial region of the third region.

Abstract: A method for fabricating a sensor, comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode, a pattern of a photodiode, a pattern of a receive electrode, a pattern of a source electrode, a pattern of a drain electrode, a pattern of a data line and a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer, a pattern of a first passivation layer, a pattern of a gate electrode and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.

Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.

Abstract: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.

Abstract: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.

Abstract: A method of stabilizing an aqueous protein or antibody formulation is disclosed herein. Additionally, stable pharmaceutical formulations are contemplated which comprise a biologically active protein, a destabilizing concentration of preservative and a stabilizing concentration of osmolyte.