Patents by Inventor Tianshuo ZHAO

Tianshuo ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum dots and production method thereof
    Patent number: 11901178
    Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 13, 2024
    Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
    Inventors: Tae Gon Kim, Nuri Oh, Tianshuo Zhao, Cherie Kagan, Eun Joo Jang, Christopher Murray
  • ELECTRONIC DEVICE AND PRODUCTION METHOD THEREOF
    Publication number: 20230200095
    Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Inventors: Tae Gon KIM, Tianshuo ZHAO, Nuri OH, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
  • Electronic device and production method thereof
    Patent number: 11581501
    Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: February 14, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
    Inventors: Tae Gon Kim, Tianshuo Zhao, Nuri Oh, Cherie Kagan, Eun Joo Jang, Christopher Murray
  • QUANTUM DOTS AND PRODUCTION METHOD THEREOF
    Publication number: 20210225641
    Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
    Type: Application
    Filed: March 1, 2021
    Publication date: July 22, 2021
    Inventors: Tae Gon KIM, Nuri OH, Tianshuo ZHAO, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
  • Quantum dots and production method thereof
    Patent number: 10950427
    Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: March 16, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
    Inventors: Tae Gon Kim, Nuri Oh, Tianshuo Zhao, Cherie Kagan, Eun Joo Jang, Christopher Murray
  • ELECTRONIC DEVICE AND PRODUCTION METHOD THEREOF
    Publication number: 20190393435
    Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 26, 2019
    Inventors: Tae Gon KIM, Tianshuo ZHAO, Nuri OH, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
  • QUANTUM DOTS AND PRODUCTION METHOD THEREOF
    Publication number: 20190385839
    Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 19, 2019
    Inventors: Tae Gon KIM, Nuri OH, Tianshuo ZHAO, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY