Patents by Inventor Tianyang LI

Tianyang LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250125145
    Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.
    Type: Application
    Filed: October 11, 2023
    Publication date: April 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Tianyang Li, Hang Yu, Rui Cheng, Deenesh Padhi, Woongsik Nam
  • Publication number: 20250033241
    Abstract: A manufacturing method for ceramics with complex structure by laser 3D printing, includes acquiring a three-dimensional model of a complex component to be fabricated, and devising a laser scanning path; placing a substrate in a gas-phase reactor chamber, followed by vacuuming and aerating vapor mixture of gas-phase precursors and carrier gas into the gas-phase reactor chamber; preheating the substrate to a specified temperature, turning on a laser and a thermal imager, the thermal imager controlling laser power in real time by generating a two-dimensional temperature map of a laser spot to realize temperature control a the printing process; setting a distance between the flat-field focusing lens and the substrate and a laser scanning speed; after stacking another one of the ceramic sheets repeatedly, until completing a fabrication of a ceramic complex component.
    Type: Application
    Filed: March 11, 2024
    Publication date: January 30, 2025
    Applicant: Wuhan University of Technology
    Inventors: Kai LIU, Tianyang LI, Song ZHANG, Rong TU, Ce SUN, Jiahao YE, Yuhan LIAO
  • Publication number: 20240420949
    Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 19, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Woongsik Nam, Euhngi Lee, Tianyang Li, Jisung Park, Hang Yu, Deenesh Padhi, Shichen Fu, Yufeng Jiang
  • Publication number: 20240332006
    Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor to the processing region. The methods may include generating plasma effluents of the silicon-containing precursor and plasma effluents of the hydrogen-containing precursor in the processing region. The plasma effluents may be generated at a frequency greater than 15 MHz. The methods may include depositing a silicon-containing material on the substrate.
    Type: Application
    Filed: March 29, 2023
    Publication date: October 3, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Tianyang Li, Jisung Park, Xinhai Han, Woongsik Nam, Deenesh Padhi
  • Patent number: 11946140
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: April 2, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Anantha K. Subramani, Seyyed Abdolreza Fazeli, Yang Guo, Ramcharan Sundar, Arun Kumar Kotrappa, Steven Mosbrucker, Steven D. Marcus, Xinhai Han, Kesong Hu, Tianyang Li, Philip A. Kraus
  • Publication number: 20240030705
    Abstract: The present invention provides an interpretable power load prediction method, system and terminal machine, relating to the field of power load prediction. The method comprises: initializing three factors—seasonal factor, trend factor, and smoothing factor, denoted as S1, T1, and I1 respectively; calculating states of the three factors for time t+1 in a current DeepES unit; outputting the three factors St+1, Tt+1, and It+1 to a next DeepES unit; repeating until a n-th DeepES unit completes its operation; calculating a predicted value Y based on the three factors that are outputted from a final DeepES unit. In power load prediction, constructing an interpretable prediction model enables users to understand the inference process of the model, therefore helps enhance the credibility of the model.
    Type: Application
    Filed: September 28, 2023
    Publication date: January 25, 2024
    Inventors: Qiang Li, Zhu Liu, Wenjing Li, Liyuan Gao, Yumin Liu, Feihu Huang, Xuxin Yang, Shilei Dong, Tianyang Li, Honglei Zhao, Meng Ming, Zhongyu Shang, Chunyang Li, Mingtao Cui, Peiyao Zhang, Hongyue Ma, Bin Dai, Dashuai Tan, Xiao Feng, Xiaokang Lin
  • Publication number: 20230369072
    Abstract: Exemplary fluid delivery assemblies for a semiconductor processing system may include a liquid delivery source. The assemblies may include a heater that is fluidly coupled with an outlet of the liquid delivery source. The assemblies may include a liquid flow controller that is fluidly coupled with the liquid delivery source downstream of the heater. The assemblies may include a liquid vaporizer fluidly coupled with a downstream end of the liquid flow controller. The assemblies may include a chamber delivery line coupled with an output of the liquid vaporizer.
    Type: Application
    Filed: May 13, 2022
    Publication date: November 16, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Daemian Raj Benjamin Raj, Collen Leng, Syed A. Alam, Tianyang Li
  • Publication number: 20220363141
    Abstract: The present application relates to the technical field of new energy vehicles- and provides a method and an apparatus for controlling a new energy vehicle. The control method comprises: detecting whether a single pedal control mode is activated; and controlling the new energy vehicle to enter a creep mode according to at least one of a gear position of the new energy vehicle, an action of a brake pedal of the new energy vehicle, and a speed of the new energy vehicle, when it is detected that the single pedal control mode is activated. The present application is able to control the switch of the creep mode according to the driving intention.
    Type: Application
    Filed: December 2, 2020
    Publication date: November 17, 2022
    Inventors: Shuai ZHANG, Mingyuan SHAN, Xiu LIU, Wentao HOU, Tianyang LI, Di WU, Weifeng DENG
  • Publication number: 20220307131
    Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Anantha K. Subramani, Seyyed Abdolreza Fazeli, Yang Guo, Ramcharan Sundar, Arun Kumar Kotrappa, Steven Mosbrucker, Steven D. Marcus, Xinhai Han, Kesong Hu, Tianyang Li, Philip A. Kraus
  • Publication number: 20220216048
    Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
    Type: Application
    Filed: January 6, 2021
    Publication date: July 7, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Tianyang Li, Deenesh Padhi, Xinhai Han, Hang Yu, Chuan Ying Wang
  • Publication number: 20210222930
    Abstract: The present disclosure provides a refrigerator with an ice maker, an ice maker ice-overturning control method, and an ice maker water injection control method. The refrigerator in the present disclosure can: perceive whether the ice cube tray is already taken out to avoid continued water injection after the ice cube tray is taken out; and perceive a temperature of ice in the ice cube tray to accurately determine a current situation of ice making so as to perform accurate control for the ice maker, thereby avoiding ice cube lumping due to unsuccessful overturning in the refrigerator, and greatly improving the ice making efficiency. Further, the refrigerator can accurately determine whether the ice tray is mounted to be in place, so as to complete a series of water injection and ice making operation accurately.
    Type: Application
    Filed: February 24, 2021
    Publication date: July 22, 2021
    Inventors: Zhongkai ZHAO, Jiannan CAI, Tao GAO, Nan JIA, Changzheng WU, Haipei LIU, Xueqing LIU, Tianyang LI