Abstract: A display substrate and a display device. The display substrate includes a display region, a first connecting wire, and a second connecting wire. A first display region includes a first sub-pixel array, including a plurality of light emitting elements arranged in an array, and the plurality of light emitting elements include a first light emitting element and a second light emitting element. The second display region includes a first pixel circuit array, including a plurality of first pixel circuit units, and the plurality of pixel circuit units include a first pixel circuit (D10) and a second pixel circuit. The first connecting wire (151) is connected to the first pixel circuit and the first light emitting element. The second connecting wire is connected to the second pixel circuit and the second light emitting element. The second connecting wire extends in a first direction, the first connecting wire extends in a second direction.

Abstract: A display substrate and a display device. The display substrate includes a display region, a first connecting wire and a second connecting wire. The display region includes a first display region and a second display region. The first display region includes a plurality of light emitting devices arranged in an array, and the plurality of light emitting devices includes a first light emitting device and a second light emitting device. The second display region includes a plurality of first pixel circuit units, and the plurality of pixel circuit units includes a first pixel circuit and a second pixel circuit. The first connecting wire is connected to the first pixel circuit and the first light emitting device. The second connecting wire is connected to the second pixel circuit and the second light emitting device. The first direction and the second direction intersect each other.

Abstract: Systems and methods of monitoring inventory of a product storage facility include an image capture device configured to move about the product storage areas of the product storage facility and capture images of the product storage areas from various angles. A computing device coupled to the image capture device obtains the images of the product storage areas captured by the image capture device and processes the obtained images of the product storage areas to detect individual products captured in the obtained images. Based on detection of the individual products captured in the images, the computing device analyzes each of the obtained images to extract meta data from the packaging the individual products to detect one more keywords and determine the locations of the detected keywords on the packaging, and then utilize this information to predict an identity of the products associated with the packaging.

Abstract: A pixel circuit and a driving method thereof, and a display device are provided. The pixel circuit includes a driving sub-circuit, a data writing sub-circuit, a first light-emitting control sub-circuit, a second light-emitting control sub-circuit, a compensation sub-circuit, and a first reset sub-circuit, and is configured to generate a driving current to control a light-emitting element to emit light, the first reset sub-circuit comprises a first transistor, the compensation sub-circuit comprises a second transistor, the first transistor and the second transistor are both polysilicon oxide thin film transistors, and an active layer type of the first transistor and an active layer type of the second transistor are different from an active layer type of a transistor comprised in at least one selected from a group consisting of the driving sub-circuit, the data writing sub-circuit, the first light-emitting control sub-circuit, and the second light-emitting control sub-circuit.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N2*) and hydrogen radicals (H*) over the surface of the metal gate stack.

Abstract: Disclosed are an array substrate and a display panel, including: a base substrate; and a wiring layer, an anode layer, and a light-emitting layer which are stacked on the base substrate sequentially, wherein the wiring layer includes a signal wiring, a first wiring and a second wiring, a projection of the first wiring on the base substrate is separated from a projection of the second wiring on the base substrate, the first and second wirings are respectively disposed on two sides of the anode layer below the anode layer, the signal wiring is between the first and second wirings, the projections of the first and second wirings on the base substrate respectively overlap projections of two sides of the anode layer on the base substrate, and a length of the second wiring is less than that of the signal wiring in an extension direction of the signal wiring.

Abstract: Provided are a display panel, a detection device therefor, and a display device. In an embodiment, the display panel includes an array layer, along a thickness direction of the display panel, the array layer including first and second conductive layers, and at least an insulating layer being located between the first and second conductive layers; a light-emitting element located at a side of the array layer facing a light-exiting surface of the display panel; and a first through-hole. In an embodiment, the first and second conductive layers are connected to each other through the first through-hole, and at least one first through-hole is reused as an alignment connection hole; and/or, along the thickness direction of the display panel, orthographic projections of at least two first through-holes onto a plane of the light-exiting surface of the display panel have different shapes.

Abstract: A display substrate and a display device. The display substrate includes a display region, a first connecting wire, and a second connecting wire. A first display region includes a first sub-pixel array, including a plurality of light emitting elements arranged in an array, and the plurality of light emitting elements include a first light emitting element and a second light emitting element. The second display region includes a first pixel circuit array, including a plurality of first pixel circuit units, and the plurality of pixel circuit units include a first pixel circuit (D10) and a second pixel circuit. The first connecting wire (151) is connected to the first pixel circuit and the first light emitting element. The second connecting wire is connected to the second pixel circuit and the second light emitting element. The second connecting wire extends in a first direction, the first connecting wire extends in a second direction.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise a dipole region and meet reduced thickness and lower thermal budget requirements. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, an interfacial layer on a top surface of the channel, a high-? dielectric layer on the interfacial layer, a dipole layer on the high-? dielectric layer, and optionally, a capping layer on the dipole layer. In some embodiments, the methods comprise annealing the substrate to drive atoms from the dipole layer into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: A method of adjusting a threshold voltage in a field-effect-transistor (FET) device includes performing a deposition process to deposit a diffusion barrier layer over a gate dielectric layer in a first region, a second region, and a third region of a semiconductor structure, performing a first patterning process to remove a portion of the deposited diffusion layer in the first region, performing a second patterning process to partially remove a portion of the deposited diffusion barrier layer in the second region, performing a dipole layer deposition process to deposit a dipole layer over the gate dielectric layer in the first region, and the diffusion barrier layer in the second region and in the third region, and performing an annealing process to drive dipole dopants from the dipole layer into the gate dielectric layer.

Abstract: Embodiments of the present disclosure are related to methods of preventing aluminum diffusion in a metal gate stack (e.g., high-? metal gate (HKMG) stacks and nMOS FET metal gate stacks). Some embodiments relate to a barrier layer for preventing aluminum diffusion into high-? metal oxide layers. The barrier layer described herein is configured to reduce threshold voltage (Vt) shift and reduce leakage in the metal gate stacks. Additional embodiments relate to methods of forming a metal gate stack having the barrier layer described herein. The barrier layer may include one or more of amorphous silicon (a-Si), titanium silicon nitride (TiSiN), tantalum nitride (TaN), or titanium tantalum nitride (TiTaN).

Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).

Abstract: An energy storage system includes a first energy storage branch and a second energy storage branch connected in parallel. The first energy storage branch includes a first battery cluster. The second energy storage branch includes a second battery cluster and a DC/DC converter connected to the second battery cluster in series, with an output end of the DC/DC converter being connected to the second battery cluster. The DC/DC converter is configured to adjust an output current of the second energy storage branch to balance an output current of the first energy storage branch and the output current of the second energy storage branch.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which comprise an integrated dipole region to meet reduced thickness and lower thermal budget requirements. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, and a dipole region having an interfacial layer, a metal film substantially free of non-metal atoms on the interfacial layer, and a high-? dielectric layer on the metal film. In some embodiments, the dipole region of the electronic devices comprises an interfacial layer, a high-? dielectric layer on the interfacial layer, and a metal film on the high-? dielectric layer. In some embodiments, the methods comprise annealing the substrate to drive particles of metal from the metal film into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: The present invention is directed to a process for making combustible foam celluloid munition parts having high aspect ratios, different densities or having an insert embedded into the foam celluloid munition part. The process for making such foam celluloid munition part requires pre-soaking dry particles of celluloid, placing the celluloid particles into a munition part mold, exposing the celluloid particles to high heat and pressure until the celluloid particles expand and fuse into the shape of the mold. Varying the density or the size of the celluloid particles used in the process produces munition parts having different densities. In addition, the placement of inserts into the particles prior to exposure to high heat and pressure produces munition parts having inserts that are useful for identification and tracking of such parts.