Abstract: Through the plasma spraying technology and the cold spraying high-speed deposition technology, an evenly distributed protective coating is formed on the surface of a plasma etching chamber. The protective coating, having a double-layer composite structure, includes a metal+Y2O3 coating as a metal+Y2O3 transition layer deposited by plasma spraying as a lower layer of the double-layer composite structure, and a high-purity Y2O3 ceramic coating coated on the metal+Y2O3 transition layer as an upper layer of the double-layer composite structure, the metal+Y2O3 transition layer is configured to reduce the difference in expansion coefficient between the Y2O3 ceramic coating and the metal substrate, and enhance the bonding force between the Y2O3 ceramic coating and the metal substrate; the high-purity Y2O3 ceramic coating is formed by depositing Y2O3 ceramic powders on the metal+Y2O3 transition layer at high speed through cold spraying high-speed deposition.

Abstract: Through the plasma spraying technology and the cold spraying high-speed deposition technology, an evenly distributed protective coating is formed on the surface of a plasma etching chamber. The protective coating, having a double-layer composite structure, includes a metal+Y2O3 coating as a metal+Y2O3 transition layer deposited by plasma spraying as a lower layer of the double-layer composite structure, and a high-purity Y2O3 ceramic coating coated on the metal+Y2O3 transition layer as an upper layer of the double-layer composite structure, the metal+Y2O3 transition layer is configured to reduce the difference in expansion coefficient between the Y2O3 ceramic coating and the metal substrate, and enhance the bonding force between the Y2O3 ceramic coating and the metal substrate; the high-purity Y2O3 ceramic coating is formed by depositing Y2O3 ceramic powders on the metal+Y2O3 transition layer at high speed through cold spraying high-speed deposition.

Abstract: A method for preparing a grounding substrate for a semiconductor device, the method including: 1) polishing the surface of a matrix of a grounding substrate to remove a carbon layer therefrom, and washing the surface of the matrix with anhydrous ethanol; 2) providing a cold spray system including a spraying device, a spray chamber, and a special fixture disposed in the spray chamber; and disposing the matrix on the special fixture; 3) using the cold spray system to spray a compressed gas carrying aluminum powder on the surface of the matrix at the supersonic speed to form an aluminum coating, thus obtaining the grounding substrate; 4) disposing the grounding substrate in a heat treatment furnace, raising the temperature therein to between 100 and 500° C., and maintaining the temperature for between 1 and 5 hrs; and 5) wet polishing the grounding substrate.

Abstract: The present invention relates to a method of surface treatment of metallic materials, more particularly, to a method of the surface self-nanocrystallization of metallic materials by the bombarding of supersonic fine particles. The method comprises the step of bombarding the surface of metallic substrate material with fine particles at supersonic speed of 300-1200 m/s carried by a compressed gas, which is ejected from a nozzle. The present method can be used for the surface self-nanocrystallization of metallic parts with a complicated structure or a large area, and the nanometer layer obtained is homogeneous. In addition, it can be operated in a simple way with low energy consumption, low cost, high efficiency of production and high surface nanocrystallization rate of from 1 cm2 to 10 cm2/min.

Abstract: The present invention relates to a method of surface treatment of metallic materials, more particularly, to a method of the surface self-nanocrystallization of metallic materials by the bombarding of supersonic fine particles. The method comprises the step of bombarding the surface of metallic substrate material with fine particles at supersonic speed of 300-1200 m/s carried by a compressed gas, which is ejected from a nozzle. The present method can be used for the surface self-nanocrystallization of metallic parts with a complicated structure or a large area, and the nanometer layer obtained is homogeneous. In addition, it can be operated in a simple way with low energy consumption, low cost, high efficiency of production and high surface nanocrystallization rate of from 1 cm2 to 10 cm2/min.