Patents by Inventor Tianzhi ZHU
Tianzhi ZHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230128298Abstract: The present application discloses an electro-static discharge protection structure, which includes an N-well and a P-well formed in a substrate. Upper parts and middle parts of the N-well and the P-well are isolated by shallow trench isolation (STI), and lower parts adjoin. The upper part of the N-well to form an N-well P-type heavily doped region adjacent to the STI. The upper part of the N-well to form an N-well N-type heavily doped region far away from the STI. The upper part of the P-well forms a P-well P-type heavily doped region adjacent to the STI. The N-well P-type heavily doped region and the N-well N-type heavily doped region are short-circuited to form an anode of the electro-static discharge protection structure. The P-well P-type heavily doped region is used as a cathode of the electro-static discharge protection structure. The present application can realize no snapback effect.Type: ApplicationFiled: August 19, 2022Publication date: April 27, 2023Applicant: Shanghai Huali Microelectronics CorporationInventor: Tianzhi Zhu
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Patent number: 11616121Abstract: The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: an N-type well 60, an upper portion of which is provided with a P-type heavily doped region 20 and an N-type heavily doped region 28; an N-type well 62, an upper portion of which is provided with a P-type heavily doped region 22 and an N-type heavily doped region 26; and a P-type well 70 connecting the N-type well 60 and 62, an upper portion of which is provided with a P-type heavily doped region 24; wherein a first electrode structure is in mirror symmetry with a second electrode structure with respect to the P-type heavily doped region 24, and active regions of the N-type well 60 and 62 are respectively provided between the P-type heavily doped region 24 and each of the N-type heavily doped region 28 and 26.Type: GrantFiled: April 26, 2021Date of Patent: March 28, 2023Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATIONInventor: Tianzhi Zhu
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Patent number: 11545482Abstract: The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped region 20 and an N-type lightly doped region 28 forming an anode formed on the upper part of an N-type well 60, a P-type heavily doped region 26 and an N-type heavily doped region 24 forming a cathode formed on the upper part of a P-type well 70, an active region of the N-type well 60 is between the N-type lightly doped region 28 and an interface of the N-type well 60 and the P-type well 70, a STI is provided between the N-type heavily doped region 24 and the interface, the STI is adjacent to the N-type heavily doped region 24, and an active region of the P-type well 70 is provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.Type: GrantFiled: March 30, 2021Date of Patent: January 3, 2023Assignee: Shanghai Huali Microelectronics CorporationInventors: Tianzhi Zhu, Guanqun Huang, Haoyu Chen, Hua Shao
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Patent number: 11532611Abstract: The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped region 20 and an N-type heavily doped region 28 forming an anode formed on the upper part of an N-type well 60, a P-type heavily doped region 26 and an N-type heavily doped region 24 forming a cathode formed on the upper part of a P-type well 70, an active region of the N-type well 60 is between the N-type heavily doped region 28 and an interface of the N-type well 60 and the P-type well 70, a STI is provided between the N-type heavily doped region 24 and the interface, the STI is adjacent to the N-type heavily doped region 24, and an active region of the P-type well 70 is provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.Type: GrantFiled: March 30, 2021Date of Patent: December 20, 2022Assignee: Shanghai Huali Microelectronics CorporationInventors: Tianzhi Zhu, Guanqun Huang, Haoyu Chen, Hua Shao
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Patent number: 11430782Abstract: The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: a P-type substrate; an N-type well 60, an upper portion of which is provided with a P-type heavily doped region 20 and an N-type heavily doped region 28; an N-type well 62, an upper portion of which is provided with a P-type heavily doped region 22 and an N-type heavily doped region 26; and a P-type well 70 connecting the N-type well 60 and the N-type well 62, an upper portion of which is provided with a P-type heavily doped region 24; wherein a first electrode is in mirror symmetry with a second electrode with respect to the P-type heavily doped region 24, and shallow trench isolations are respectively provided between the P-type heavily doped region 24 and each of the N-type heavily doped region 28 and the N-type heavily doped region 26.Type: GrantFiled: April 19, 2021Date of Patent: August 30, 2022Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATIONInventor: Tianzhi Zhu
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Publication number: 20210335777Abstract: The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: a P-type substrate; an N-type well 60, an upper portion of which is provided with a P-type heavily doped region 20 and an N-type heavily doped region 28; an N-type well 62, an upper portion of which is provided with a P-type heavily doped region 22 and an N-type heavily doped region 26; and a P-type well 70 connecting the N-type well 60 and the N-type well 62, an upper portion of which is provided with a P-type heavily doped region 24; wherein a first electrode is in mirror symmetry with a second electrode with respect to the P-type heavily doped region 24, and shallow trench isolations are respectively provided between the P-type heavily doped region 24 and each of the N-type heavily doped region 28 and the N-type heavily doped region 26.Type: ApplicationFiled: April 19, 2021Publication date: October 28, 2021Inventor: Tianzhi ZHU
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Publication number: 20210335776Abstract: The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped region 20 and an N-type lightly doped region 28 forming an anode formed on the upper part of an N-type well 60, a P-type heavily doped region 26 and an N-type heavily doped region 24 forming a cathode formed on the upper part of a P-type well 70, an active region of the N-type well 60 is between the N-type lightly doped region 28 and an interface of the N-type well 60 and the P-type well 70, a STI is provided between the N-type heavily doped region 24 and the interface, the STI is adjacent to the N-type heavily doped region 24, and an active region of the P-type well 70 is provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.Type: ApplicationFiled: March 30, 2021Publication date: October 28, 2021Applicant: Shanghai Huali Microelectronics CorporationInventors: Tianzhi Zhu, Guanqun Huang, Haoyu Chen, Hua Shao
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Publication number: 20210335997Abstract: The present disclosure provides a silicon controlled rectifier and a manufacturing method thereof. The silicon controlled rectifier comprises: an N-type well 60, an upper portion of which is provided with a P-type heavily doped region 20 and an N-type heavily doped region 28; an N-type well 62, an upper portion of which is provided with a P-type heavily doped region 22 and an N-type heavily doped region 26; and a P-type well 70 connecting the N-type well 60 and 62, an upper portion of which is provided with a P-type heavily doped region 24; wherein a first electrode structure is in mirror symmetry with a second electrode structure with respect to the P-type heavily doped region 24, and active regions of the N-type well 60 and 62 are respectively provided between the P-type heavily doped region 24 and each of the N-type heavily doped region 28 and 26.Type: ApplicationFiled: April 26, 2021Publication date: October 28, 2021Inventor: Tianzhi Zhu
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Publication number: 20210335775Abstract: The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped region 20 and an N-type heavily doped region 28 forming an anode formed on the upper part of an N-type well 60, a P-type heavily doped region 26 and an N-type heavily doped region 24 forming a cathode formed on the upper part of a P-type well 70, an active region of the N-type well 60 is between the N-type heavily doped region 28 and an interface of the N-type well 60 and the P-type well 70, a STI is provided between the N-type heavily doped region 24 and the interface, the STI is adjacent to the N-type heavily doped region 24, and an active region of the P-type well 70 is provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.Type: ApplicationFiled: March 30, 2021Publication date: October 28, 2021Applicant: Shanghai Huali Microelectronics CorporationInventors: Tianzhi Zhu, Guanqun Huang, Haoyu Chen, Hua Shao
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Patent number: 10700186Abstract: The present disclosure provides a silicon-controlled rectifier structure and a manufacturing method therefor. The silicon-controlled rectifier structure comprises a substrate; and an N-Well and a P-Well in the substrate, wherein an N-type heavily-doped region 410 and a P-type heavily-doped region 422 which are connected to an anode are provided in the N-Well, and a floating guard ring 416 is further provided in the N-Well between the N-type heavily-doped region 410 and the P-type heavily-doped region 422, the guard ring being spaced from the N-type heavily-doped region 410 by a shallow trench isolation, and an active area having a predetermined width exists between the guard ring and the P-type heavily-doped region 422; and an N-type heavily-doped region 414 and a P-type heavily-doped region 424 which are connected to a cathode are provided in the P-Well.Type: GrantFiled: November 16, 2018Date of Patent: June 30, 2020Inventor: Tianzhi Zhu
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Publication number: 20200058781Abstract: The present disclosure provides a silicon-controlled rectifier structure and a manufacturing method therefor. The silicon-controlled rectifier structure comprises a substrate; and an N-Well and a P-Well in the substrate, wherein an N-type heavily-doped region 410 and a P-type heavily-doped region 422 which are connected to an anode are provided in the N-Well, and a floating guard ring 416 is further provided in the N-Well between the N-type heavily-doped region 410 and the P-type heavily-doped region 422, the guard ring being spaced from the N-type heavily-doped region 410 by a shallow trench isolation, and an active area having a predetermined width exists between the guard ring and the P-type heavily-doped region 422; and an N-type heavily-doped region 414 and a P-type heavily-doped region 424 which are connected to a cathode are provided in the P-Well.Type: ApplicationFiled: November 16, 2018Publication date: February 20, 2020Inventor: Tianzhi ZHU
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Publication number: 20200058637Abstract: The present disclosure provides a silicon-controlled rectifier structure and a manufacturing method therefor. The silicon-controlled rectifier structure comprises a substrate; and an N-Well and a P-Well in the substrate, and an N-type heavily-doped region and a P-type heavily-doped region which are connected to an anode are provided in the N-Well, and a guard ring connected to the anode is further provided in the N-Well between the N-type heavily-doped region and the P-type heavily-doped region, the guard ring being spaced from the N-type heavily-doped region by a shallow trench isolation, and an active area having a predetermined width exists between the guard ring and the P-type heavily-doped region; and an N-type heavily-doped region and a P-type heavily-doped region which are connected to a cathode are provided in the P-Well.Type: ApplicationFiled: November 16, 2018Publication date: February 20, 2020Inventor: Tianzhi ZHU