Patents by Inventor Tiao-Hung Hsiao

Tiao-Hung Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050052372
    Abstract: A display unit of an active-matrix organic light emitting display is provided. The display unit includes a first transistor, a second transistor, and an organic light emitting diode. The display unit uses a P-type LTPS-TFT having a lower threshold voltage to reduce the operational Vgs. Therefore, the second transistor can provide the stable drain current for the organic light emitting diode. The organic light emitting diode can thus maintain its brightness for a longer period of time.
    Type: Application
    Filed: October 28, 2003
    Publication date: March 10, 2005
    Inventors: Hsin-Hung Lee, Tiao-Hung Hsiao, Yun-Sheng Chen
  • Publication number: 20040155579
    Abstract: An organic electro-luminescent display device of high transparency and a fabrication method thereof. An optic-compensation film of transparent dielectric material is formed on the surface of a glass substrate, in which the transparent nature of the optic-compensation film is not limited to light of a specific wavelength. An anode layer is formed on the optic-compensation film. A laminated body of organic material is formed on the anode layer. A cathode layer is formed on the laminated body.
    Type: Application
    Filed: December 30, 2003
    Publication date: August 12, 2004
    Applicant: AU Optronics Corp.
    Inventor: Tiao-Hung Hsiao
  • Publication number: 20040084669
    Abstract: An active matrix organic light-emitting diode (AMOLED) and method of manufacturing the same. The AMOLED comprises of a thin film transistor with a gate, a gate insulation layer, a channel layer and a low-roughness source/drain metal terminal and an organic light-emitting diode with an anode layer, an organic light-emitting layer and a cathode layer. The gate of the thin film transistor is on a substrate, the channel layer is above the gate and the gate insulation layer is between the gate and the channel layer. The low-roughness source/drain metal terminal is positioned on each side of the gate covering a portion of the channel layer and the gate insulation layer. There is an ohmic contact layer between the channel layer and the low-roughness source/drain metal terminal. The anode layer of the organic light-emitting diode and one end of the low-roughness source/drain metal terminal are connected.
    Type: Application
    Filed: May 30, 2003
    Publication date: May 6, 2004
    Inventors: HSIN-HUNG LEE, TIAO-HUNG HSIAO