Patents by Inventor Tien-Chung Yang
Tien-Chung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10825780Abstract: A method includes forming a first semiconductor device, wherein the first semiconductor device includes a top surface and a bottom surface, and wherein the first semiconductor device includes a metal layer having an exposed first surface. The method also includes forming a Electromagnetic Interference (EMI) layer over the top surface and sidewalls of the first semiconductor device, wherein the EMI layer electrically contacts the exposed first surface of the metal layer. The method also includes forming a molding compound over the EMI layer.Type: GrantFiled: November 29, 2016Date of Patent: November 3, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Hsi Wu, Hsien-Wei Chen, Li-Hsien Huang, Tien-Chung Yang
-
Publication number: 20200118974Abstract: A semiconductor structure includes a plurality of first dies, a second die disposed over each of the first dies, and a dielectric material surrounding the first dies and the second die. The second dies overlaps a portion of each of the first dies. A dimension of the second die is different from a dimension of the first dies.Type: ApplicationFiled: December 13, 2019Publication date: April 16, 2020Inventors: CHEN-HUA YU, CHI-HSI WU, DER-CHYANG YEH, HSIEN-WEI CHEN, AN-JHIH SU, TIEN-CHUNG YANG
-
Patent number: 10510715Abstract: A semiconductor structure includes a first die, a second die horizontally disposed adjacent to the first die, a third die disposed over the first die and the second die, and a first dielectric material surrounding the first die and the second die, wherein a portion of the first dielectric material is disposed between the first die and the second die, and the third die is disposed over the portion of the dielectric.Type: GrantFiled: December 14, 2015Date of Patent: December 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Hua Yu, Chi-Hsi Wu, Der-Chyang Yeh, Hsien-Wei Chen, An-Jhih Su, Tien-Chung Yang
-
Publication number: 20190326132Abstract: A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the dielectric layer, and a plurality of contacts positioned in the cavity and bonded to the substrate. A component is bonded to the plurality of contacts. Underfill is disposed in the cavity between the dielectric layer and the component. A plurality of connectors is on the dielectric layer, the connectors being connected through the dielectric layer to a conductor that is at a same level of metallization as the plurality of contacts.Type: ApplicationFiled: July 1, 2019Publication date: October 24, 2019Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
-
Patent number: 10340155Abstract: A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the dielectric layer, and a plurality of contacts positioned in the cavity and bonded to the substrate. A component is bonded to the plurality of contacts. Underfill is disposed in the cavity between the dielectric layer and the component. A plurality of connectors is on the dielectric layer, the connectors being connected through the dielectric layer to a conductor that is at a same level of metallization as the plurality of contacts.Type: GrantFiled: April 14, 2016Date of Patent: July 2, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
-
Patent number: 10276542Abstract: A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.Type: GrantFiled: July 21, 2016Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Li-Hsien Huang, An-Jhih Su, Hsien-Wei Chen, Hua-Wei Tseng, Jo-Mei Wang, Tien-Chung Yang, Kuan-Chung Lu
-
Patent number: 10217687Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductor over the conductive pad, a polymeric material over the semiconductor substrate and surrounding the conductor, and a seed layer between the polymeric material and the conductor. A top surface of the conductor, a top surface of the polymeric material and a top surface of the seed layer are substantially coplanar.Type: GrantFiled: March 16, 2018Date of Patent: February 26, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tien-Chung Yang, Lin-Chih Huang, Hsien-Wei Chen, An-Jhih Su, Li-Hsien Huang
-
Patent number: 10163701Abstract: Multi-stack package-on-package structures are disclosed. In a method, a first stacked semiconductor device is formed on a first carrier wafer. The first stacked semiconductor device is singulated. The first stacked semiconductor device is adhered to a second carrier wafer. A second semiconductor device is attached on the first stacked semiconductor device. The second semiconductor device and the first stacked semiconductor device are encapsulated. Electrical connections are formed on and electrically coupled to the first stacked semiconductor device and the second semiconductor device.Type: GrantFiled: October 30, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Jung Lee, Hsien-Wei Chen, An-Jhih Su, Wei-Yu Chen, Tien-Chung Yang, Li-Hsien Huang
-
Patent number: 10090284Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device includes a first set of through vias between and connecting a top package and a redistribution layer (RDL), the first set of through vias in physical contact with a molding compound and separated from a die. The semiconductor device also includes a first interconnect structure between and connecting the top package and the RDL, the first interconnect structure separated from the die and from the first set of through vias by the molding compound. The first interconnect structure includes a second set of through vias and at least one integrated passive device.Type: GrantFiled: December 29, 2017Date of Patent: October 2, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
-
Publication number: 20180211895Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductor over the conductive pad, a polymeric material over the semiconductor substrate and surrounding the conductor, and a seed layer between the polymeric material and the conductor. A top surface of the conductor, a top surface of the polymeric material and a top surface of the seed layer are substantially coplanar.Type: ApplicationFiled: March 16, 2018Publication date: July 26, 2018Inventors: TIEN-CHUNG YANG, LIN-CHIH HUANG, HSIEN-WEI CHEN, AN-JHIH SU, LI-HSIEN HUANG
-
Publication number: 20180151510Abstract: A method includes forming a first semiconductor device, wherein the first semiconductor device includes a top surface and a bottom surface, and wherein the first semiconductor device includes a metal layer having an exposed first surface. The method also includes forming a Electromagnetic Interference (EMI) layer over the top surface and sidewalls of the first semiconductor device, wherein the EMI layer electrically contacts the exposed first surface of the metal layer. The method also includes forming a molding compound over the EMI layer.Type: ApplicationFiled: November 29, 2016Publication date: May 31, 2018Inventors: Chi-Hsi Wu, Hsien-Wei Chen, Li-Hsien Huang, Tien-Chung Yang
-
Publication number: 20180122781Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device includes a first set of through vias between and connecting a top package and a redistribution layer (RDL), the first set of through vias in physical contact with a molding compound and separated from a die. The semiconductor device also includes a first interconnect structure between and connecting the top package and the RDL, the first interconnect structure separated from the die and from the first set of through vias by the molding compound. The first interconnect structure includes a second set of through vias and at least one integrated passive device.Type: ApplicationFiled: December 29, 2017Publication date: May 3, 2018Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
-
Patent number: 9941248Abstract: Package structures, PoP devices and methods of forming the same are disclosed. A package structure includes a first chip, a redistribution layer structure, a plurality of UBM pads, a plurality of connectors and a separator. The redistribution layer structure is electrically connected to the first chip. The UBM pads are electrically connected to the redistribution layer structure. The connectors are electrically connected to the UBM pads. The separator is over the redistribution layer structure and surrounds the connectors.Type: GrantFiled: August 17, 2016Date of Patent: April 10, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen, Jo-Mei Wang, Wei-Yu Chen
-
Patent number: 9929069Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.Type: GrantFiled: December 15, 2016Date of Patent: March 27, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tien-Chung Yang, Lin-Chih Huang, Hsien-Wei Chen, An-Jhih Su, Li-Hsien Huang
-
Patent number: 9922939Abstract: An embodiment device package includes a device die, a molding compound surrounding the device die, a conductive through inter-via (TIV) extending through the molding compound, and an electromagnetic interference (EMI) shield disposed over and extending along sidewalls of the molding compound. The EMI shield contacts the conductive TIV, and the conductive TIV electrically connects the EMI shield to an external connector. The external connector and the EMI shield are disposed on opposing sides of the device die.Type: GrantFiled: May 22, 2017Date of Patent: March 20, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Yu Chen, Hsien-Wei Chen, An-Jhih Su, Jo-Mei Wang, Tien-Chung Yang
-
Publication number: 20180068979Abstract: Multi-stack package-on-package structures are disclosed. In a method, a first stacked semiconductor device is formed on a first carrier wafer. The first stacked semiconductor device is singulated. The first stacked semiconductor device is adhered to a second carrier wafer. A second semiconductor device is attached on the first stacked semiconductor device. The second semiconductor device and the first stacked semiconductor device are encapsulated. Electrical connections are formed on and electrically coupled to the first stacked semiconductor device and the second semiconductor device.Type: ApplicationFiled: October 30, 2017Publication date: March 8, 2018Inventors: Chi-Jung Lee, Hsien-Wei Chen, An-Jhih Su, Wei-Yu Chen, Tien-Chung Yang, Li-Hsien Huang
-
Publication number: 20180026010Abstract: A package structure has first and second dies, a molding compound, a first redistribution layer, at least one first through interlayer via (TIV), second through interlayer vias (TIVs), an electromagnetic interference shielding layer and conductive elements. The first die is molded in the molding compound. The second die is disposed on the molding compound. The first redistribution layer is located between the conductive elements and the molding compound and electrically connected to the first and second dies. The molding compound is located between the second die and the first redistribution layer. The first and second TIVs are molded in the molding compound and electrically connected to the first redistribution layer. The second TIVs are located between the first die and the first TIV. The electromagnetic interference shielding layer is in contact with the first TIV. The conductive elements are connected to the first redistribution layer.Type: ApplicationFiled: July 21, 2016Publication date: January 25, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Li-Hsien Huang, An-Jhih Su, Hsien-Wei Chen, Hua-Wei Tseng, Jo-Mei Wang, Tien-Chung Yang, Kuan-Chung Lu
-
Patent number: 9859258Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device includes a first set of through vias between and connecting a top package and a redistribution layer (RDL), the first set of through vias in physical contact with a molding compound and separated from a die. The semiconductor device also includes a first interconnect structure between and connecting the top package and the RDL, the first interconnect structure separated from the die and from the first set of through vias by the molding compound. The first interconnect structure includes a second set of through vias and at least one integrated passive device.Type: GrantFiled: May 17, 2016Date of Patent: January 2, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
-
Publication number: 20170345795Abstract: Package structures, PoP devices and methods of forming the same are disclosed. A package structure includes a first chip, a redistribution layer structure, a plurality of UBM pads, a plurality of connectors and a separator. The redistribution layer structure is electrically connected to the first chip. The UBM pads are electrically connected to the redistribution layer structure. The connectors are electrically connected to the UBM pads. The separator is over the redistribution layer structure and surrounds the connectors.Type: ApplicationFiled: August 17, 2016Publication date: November 30, 2017Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen, Jo-Mei Wang, Wei-Yu Chen
-
Publication number: 20170338207Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device includes a first set of through vias between and connecting a top package and a redistribution layer (RDL), the first set of through vias in physical contact with a molding compound and separated from a die. The semiconductor device also includes a first interconnect structure between and connecting the top package and the RDL, the first interconnect structure separated from the die and from the first set of through vias by the molding compound. The first interconnect structure includes a second set of through vias and at least one integrated passive device.Type: ApplicationFiled: May 17, 2016Publication date: November 23, 2017Inventors: Wei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen