Abstract: A method for forming a waferless interposer comprises the following steps. A transparent carrier is provided. A buffer layer is formed on the transparent carrier. First pads are formed on the buffer layer, and interconnections are formed on the first pads. A non-conductive layer is formed on the buffer layer and filled between adjacent the interconnections, wherein the upper surfaces of the interconnections are exposed on the non-conductive layer. A first redistribution procedure is performed to form a first conductive pattern on the non-conductive layer for connecting with the interconnections. A passivation layer is formed on the first conductive pattern, and is defined to form first contact holes thereon. Second pads are formed on the passivation layer to connect with the first conductive pattern through the first contact holes. After, a laser below the transparent carrier irradiates laser beam on the buffer layer to dissociate it for separating the interposer from the transparent carrier.