Patents by Inventor Tien Kun Lin

Tien Kun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FAN
    Publication number: 20190085853
    Abstract: A fan is provided. The fan includes a frame, a rotor and a stator. The rotor is received in the frame and includes a magnetic part, a metal housing, a hub and a plurality of blades. The metal housing is telescoped on the magnetic part. The hub is telescoped on the metal housing. The blades are formed on the hub. The stator is received in the frame. The stator includes a plurality of silicon-steel sheets which form a silicon-steel sheet outside diameter, the silicon-steel sheet outside diameter is greater than 42 mm and wherein the rated speed of the fan is greater than 8000 RPM.
    Type: Application
    Filed: January 9, 2018
    Publication date: March 21, 2019
    Inventors: Shun-Chen CHANG, Wen-Bin LIU, Tien-Kun LIN, Chao-Fu YANG
  • Patent number: 8304787
    Abstract: A light-emitting device having a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts, while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt, while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: November 6, 2012
    Assignee: Epistar Corporation
    Inventors: Chung-Ying Chang, Wen-Jia Huang, Chao-Hsu Lai, Tien Kun Lin
  • Publication number: 20100308348
    Abstract: The disclosure provides a light-emitting device comprising a light-emitting epitaxy structure. The light-emitting epitaxy structure has a modulus of a critical reverse voltage not less than 50 volts while the light-emitting epitaxy structure is reverse-biased at a current density of ?10 ?A/mm2, and has a luminous efficiency not less than 50 lumen/Watt while the light-emitting epitaxy structure is forward-biased at a current density of 150 mA/mm2. Another aspect of the present disclosure provides a manufacturing method for a light-emitting device.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 9, 2010
    Inventors: Chung-Ying Chang, Wen-Jia Huang, Chao-Hsu Lai, Tien Kun Lin