Abstract: An insulating layer formed by deposition is annealed in the presence of radical oxygen to reduce bond defects. A substrate is provided. An oxide layer is deposited overlying the substrate. The oxide layer has a plurality of bond defects. The oxide layer is annealed in the presence of radical oxygen to modify a substantial portion of the plurality of bond defects by using oxygen atoms. The anneal, in one form, is an in-situ steam generation (ISSG) anneal. In one form, the insulating layer overlies a layer of charge storage material, such as nanoclusters, that form a gate structure of a semiconductor storage device. The ISSG anneal repairs bond defects by oxidizing defective silicon bonds in the oxide layer when the oxide layer is silicon dioxide.

Abstract: A method of forming a semiconductor device, the method includes forming a gate dielectric over the semiconductor substrate, exposing the gate dielectric to a halogen, and incorporating the halogen into the gate dielectric. In one embodiment, the halogen is fluorine. In one embodiment, the gate dielectric is also exposed to nitrogen and the nitrogen is incorporated into the gate dielectric. In one embodiment, the gate dielectric is a metal oxide.

Abstract: A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

Abstract: A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.

Abstract: A semiconductor fabrication includes forming a gate dielectric overlying a semiconductor substrate and depositing a metal gate film overlying the gate dielectric. Following deposition of the metal gate film, nitrogen, carbon, and/or oxygen is introduced into the metal gate film by exposing the metal gate film to a nitrogen, carbon, and/or oxygen bearing plasma. Thereafter, the nitrogenated/oxygenated/carbonated metal gate film is patterned to form a transistor gate electrode. Depositing the metal gate film is preferably done with a low energy process such as atomic layer deposition (ALD) or metal organic chemical vapor deposition (MOCVD) to reduce damage to the underlying gate dielectric. The metal gate film for NMOS devices is preferably a compound of nitrogen and Ti, W, or Ta. A second metal gate film may be used for PMOS devices. This second metal gate film is preferably a compound of oxygen and Ir, Ru, Mo, or Re.

Abstract: A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.