Abstract: A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.

Abstract: The present invention discloses a foldable seat cushion which comprises a first cushion body at a front region thereof, a second cushion body at a back region thereof opposite to the first cushion body and having a lower spine supporting portion, at least one third cushion body disposed between the first cushion body and the second cushion body, and at least one folding member for connecting the at least one third cushion body to the first cushion body and the second cushion body.

Abstract: An interchangeable massage roller is disclosed, which comprises a roller body having an annular depression around the middle section. The annular depression is selectively wrapped around by a cold/hot compress pad or a massage pad with different hardness and different projections according to the different need. Therefore, a cold/hot compress or a rolling massage course is applied to a user by the interchangeable massage roller according to the user's need, achieving the multifunction and selectable effect.