Patents by Inventor TIEN-MING WANG

TIEN-MING WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210020756
    Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Wei WANG, Chia-Ming TSAI, Ke-Chih LIU, Chandrashekhar Prakash SAVANT, Tien-Wei YU
  • Publication number: 20200412148
    Abstract: A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB. The first PCB comprises at least a portion of a primary side circuit. The second PCB comprises at least a portion of a secondary side circuit. The third PCB is perpendicular to the first PCB and the second PCB. An isolation coupling element is disposed on the third PCB. The isolation coupling element comprises a multi-layer PCB. The first PCB comprises a high voltage (HV) semiconductor package. A surface of a die paddle of the HV semiconductor package is exposed from a molding encapsulation of the HV semiconductor package.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Applicant: Alpha and Omega Semiconductor (Cayman) Ltd.
    Inventors: Pei-Lun Huang, Yu-Ming Chen, Tien-Chi Lin, Jung-Pei Cheng, Yueh-Ping Yu, Zhi-Qiang Niu, Xiaotian Zhang, Long-Ching Wang
  • Patent number: 10879159
    Abstract: A substrate, a semiconductor package thereof and a process of making the same are provided. The substrate comprises an upper circuit layer and a lower circuit layer, the upper circuit layer comprising at least one trace and at least one pad and the lower circuit layer comprising at least one trace and at least one pad, wherein the trace of the upper circuit layer and the trace of the lower circuit layer are not aligned.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: December 29, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tien-Szu Chen, Sheng-Ming Wang, Kuang-Hsiung Chen, Yu-Ying Lee
  • Publication number: 20200403094
    Abstract: A semiconductor device includes a semiconductor substrate, a gate stack, an air spacer, a first spacer, a second spacer, a sacrificial layer, and a contact plug. The gate stack is on the semiconductor substrate. The air spacer is around the gate stack. The first spacer is around the air spacer. The second spacer is on the air spacer and the first spacer. The sacrificial layer is on the gate stack, and an etching selectivity between the second spacer and the sacrificial layer is in a range from about 10 to about 30. The contact plug lands on the second spacer and the gate stack.
    Type: Application
    Filed: November 20, 2019
    Publication date: December 24, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jia-Chuan YOU, Chia-Hao CHANG, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Patent number: 10872810
    Abstract: A method for forming a fin field effect transistor device structure includes forming fin structures over a substrate. The method also includes forming a gate structure across the fin structures. The method also includes forming source/drain epitaxial structures over the fin structures. The method also includes forming blocking structures between the source/drain epitaxial structures. The method also includes depositing contact structures over the source/drain epitaxial structures and between the blocking structures. The method also includes removing a top portion of the blocking structures. The method also includes depositing an etch stop layer over the blocking structures and the contact structures, so that an air gap is formed between the etch stop layer and the blocking structure.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lin-Yu Huang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20200395251
    Abstract: A method for forming an electrical connection structure is provided. The method includes forming a first metal material in an opening of a dielectric layer. The first metal material includes a plurality of grains. The method also includes forming a second metal material over the first metal material. The method also includes annealing the second metal material so that the second metal material diffuses along grain boundaries of the grains of the first metal material. The method also includes removing the second metal material from the upper surface of the first metal material.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 17, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Chuan CHIU, Jia-Chuan YOU, Chia-Hao CHANG, Chun-Yuan CHEN, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Patent number: 10867863
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure in a substrate. The method includes forming a first dielectric layer over the first source/drain structure, the second source/drain structure, and the substrate. The method includes forming a gate electrode in the first trench. The method includes removing the first dielectric layer. The method includes forming a first conductive strip structure over the first source/drain structure and the substrate. The method includes partially removing the first conductive strip structure to form a second trench in the first conductive strip structure. The method includes forming a second dielectric layer in the second trench.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 10868000
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first epitaxial structure and a second epitaxial structure over a semiconductor substrate. The method includes forming a dielectric layer over the first epitaxial structure, the second epitaxial structure, and the semiconductor substrate. The method includes forming a first mask layer over the dielectric layer and between the first epitaxial structure and the second epitaxial structure. The method includes forming a second mask layer over the dielectric layer and the first mask layer. The method includes partially removing the dielectric layer covering the first epitaxial structure and the second epitaxial structure. The method includes removing the first mask layer. The method includes forming a first conductive layer and a second conductive layer respectively in the first recess and the second recess.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Zhen Yu, Tien-Lu Lin, Jia-Chuan You, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20200381291
    Abstract: A method and structure directed to providing a source/drain isolation structure includes providing a device having a first source/drain region adjacent to a second source/drain region. A masking layer is deposited between the first and second source/drain regions and over an exposed first part of the second source/drain region. After depositing the masking layer, a first portion of an ILD layer disposed on either side of the masking layer is etched, without substantial etching of the masking layer, to expose a second part of the second source/drain region and to expose the first source/drain region. After etching the first portion of the ILD layer, the masking layer is etched to form an L-shaped masking layer. After forming the L-shaped masking layer, a first metal layer is formed over the exposed first source/drain region and a second metal layer is formed over the exposed second part of the second source/drain region.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 3, 2020
    Inventors: Lin-Yu HUANG, Sheng-Tsung WANG, Chia-Hao CHANG, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Patent number: 10854550
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: December 1, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Sheng-Ming Wang, Tien-Szu Chen, Wen-Chih Shen, Hsing-Wen Lee, Hsiang-Ming Feng
  • Patent number: 10827293
    Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal is generated with a 3D sound generating process according to listener data and sound data. Pre-recorded sound data is retrieved to further generate a target distance function corresponding to the sound distance. A fixed head-related transfer function corresponding to a fixed distance is retrieved. A target head-related transfer function corresponding to the sound distance is generated by adapting the target distance function to the fixed head-related transfer function. The sound signal is reproduced by multiplying the sound signal by the target head-related transfer function.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: November 3, 2020
    Assignee: HTC Corporation
    Inventors: Chun-Min Liao, Yan-Min Kuo, Li-Yen Lin, Chi-Tang Ho, Tien-Ming Wang, Tsung-Yu Tsai, Yen-Chieh Wang, Shuo-Yen Lin
  • Patent number: 10818568
    Abstract: A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB. The first PCB comprises at least a portion of a primary side circuit. The second PCB comprises at least a portion of a secondary side circuit. The third PCB is perpendicular to the first PCB and the second PCB. An isolation coupling element is disposed on the third PCB. The isolation coupling element comprises a multi-layer PCB. The first PCB comprises a high voltage (HV) semiconductor package. A surface of a die paddle of the HV semiconductor package is exposed from a molding encapsulation of the HV semiconductor package.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: October 27, 2020
    Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
    Inventors: Pei-Lun Huang, Yu-Ming Chen, Tien-Chi Lin, Jung-Pei Cheng, Yueh-Ping Yu, Zhi-Qiang Niu, Xiaotian Zhang, Long-Ching Wang
  • Patent number: 10797151
    Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Wei Wang, Chia-Ming Tsai, Ke-Chih Liu, Chandrashekhar Prakash Savant, Tien-Wei Yu
  • Publication number: 20200312994
    Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a fin extending from a substrate, a gate structure over a channel region of the fin, a source/drain contact over a source/drain region of the fin, a spacer extending along a sidewall of the gate structure, a liner extending along a sidewall of the source/drain contact, a gate contact via over and electrically coupled to the gate structure, and a source/drain contact via over and electrically coupled to the source/drain contact. The gate contact via extends through a first dielectric layer such that a portion of the first dielectric layer interposes between the gate contact via and the spacer. The source/drain contact via extends through a second dielectric layer such that a portion of the second dielectric layer interposes between the source/drain contact via and the liner.
    Type: Application
    Filed: June 14, 2019
    Publication date: October 1, 2020
    Inventors: Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20200294846
    Abstract: A method for forming a fin field effect transistor device structure includes forming fin structures over a substrate. The method also includes forming a gate structure across the fin structures. The method also includes forming source/drain epitaxial structures over the fin structures. The method also includes forming blocking structures between the source/drain epitaxial structures. The method also includes depositing contact structures over the source/drain epitaxial structures and between the blocking structures. The method also includes removing a top portion of the blocking structures. The method also includes depositing an etch stop layer over the blocking structures and the contact structures, so that an air gap is formed between the etch stop layer and the blocking structure.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lin-Yu HUANG, Jia-Chuan YOU, Chia-Hao CHANG, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Patent number: 10755964
    Abstract: A method and structure directed to providing a source/drain isolation structure includes providing a device having a first source/drain region adjacent to a second source/drain region. A masking layer is deposited between the first and second source/drain regions and over an exposed first part of the second source/drain region. After depositing the masking layer, a first portion of an ILD layer disposed on either side of the masking layer is etched, without substantial etching of the masking layer, to expose a second part of the second source/drain region and to expose the first source/drain region. After etching the first portion of the ILD layer, the masking layer is etched to form an L-shaped masking layer. After forming the L-shaped masking layer, a first metal layer is formed over the exposed first source/drain region and a second metal layer is formed over the exposed second part of the second source/drain region.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: August 25, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20200243519
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first epitaxial structure and a second epitaxial structure over a semiconductor substrate. The method includes forming a dielectric layer over the first epitaxial structure, the second epitaxial structure, and the semiconductor substrate. The method includes forming a first mask layer over the dielectric layer and between the first epitaxial structure and the second epitaxial structure. The method includes forming a second mask layer over the dielectric layer and the first mask layer. The method includes partially removing the dielectric layer covering the first epitaxial structure and the second epitaxial structure. The method includes removing the first mask layer. The method includes forming a first conductive layer and a second conductive layer respectively in the first recess and the second recess.
    Type: Application
    Filed: January 25, 2019
    Publication date: July 30, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Zhen YU, Tien-Lu LIN, Jia-Chuan YOU, Chia-Hao CHANG, Yu-Ming LIN, Chih-Hao WANG
  • Patent number: 10681486
    Abstract: A method for obtaining Hi-Res audio transfer information is provided. The method is applicable to the electronic device having a processor. In the method, a first audio signal is captured and converted from the time domain into in the frequency domain to generate a first signal spectrum. Then, a regression analysis is performed on an energy distribution of the first signal spectrum to predict an extended energy distribution according to the first signal spectrum, and head-related parameters are used to compensate for the extended energy distribution to generate an extended signal spectrum. Finally, the first signal spectrum and the extended signal spectrum are combined into a second signal spectrum which is converted from the frequency domain into the time domain to generate a second audio signal including Hi-Res audio transfer information.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 9, 2020
    Assignee: HTC Corporation
    Inventors: Tien-Ming Wang, Li-Yen Lin, Chun-Min Liao, Chi-Tang Ho, Yan-Min Kuo, Tsung-Yu Tsai
  • Publication number: 20200168555
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.
    Type: Application
    Filed: October 9, 2019
    Publication date: May 28, 2020
    Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20200161439
    Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device according to the present disclosure includes a fin extending from a substrate, a gate structure over a channel region of the fin, a source/drain contact over a source/drain region of the fin, a gate cut feature adjacent the gate structure, a source/drain contact isolation feature adjacent the source/drain contact, a spacer extending along a sidewall of the gate cut feature and a sidewall of the gate structure, a liner extending along a sidewall of the source/drain contact isolation feature and a sidewall of the source/drain contact; and an air gap sandwiched between the spacer and the liner. The gate cut feature and the source/drain contact isolation feature are separated by the spacer, the air gap and the liner.
    Type: Application
    Filed: May 8, 2019
    Publication date: May 21, 2020
    Inventors: Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang